Single-step, catalyst-free plasma-assisted synthesis and growth mechanism of single-crystalline aluminum nitride nanorods

Abstract

Synthesis of one-dimensional AlN nanostructures commonly requires high process temperatures ͑Ͼ900°C͒, metal catalyst, and hazardous gas/powder precursors. We report on a simple, single-step, catalyst-free, plasma-assisted growth of dense patterns of size-uniform single-crystalline AlN nanorods at a low substrate temperature ͑ϳ650°C͒ without any catalyst or hazardous precursors. This unusual growth mechanism is based on highly effective plasma dissociation of N 2 molecules, localized species precipitation on AlN islands, and reduced diffusion on the nitrogen-rich surface. This approach can also be used to produce other high-aspect-ratio oxide and nitride nanostructures for applications in energy conversion, sensing, and optoelectronics.

Plasmon-Free Surface-Enhanced Raman Spectroscopy Using α-Type MoO3 Semiconductor Nanorods with Strong Light Scattering in the Visible Regime

“…After the thin film reached a critical thickness that can accommodate a lattice-mismatch strain between α-MoO 3 and the substrate, the thin film generated dislocations and grains that served as nucleation sites for subsequent NR growth. In particular, α-MoO 3 NRs are related to growth anisotropy based on specific facets in the presence of truncated edge structures at the front tip of the NR (Figure g), which has also been reported in W 18 O 49 and AlN NRs. , …”

“…In particular, α-MoO 3 NRs are related to growth anisotropy based on specific facets in the presence of truncated edge structures at the front tip of the NR (Figure 3g), which has also been reported in W 18 O 49 and AlN NRs. 52,53 3.4. SERS Performance of the α-MoO 3 NRs.…”

Retracted Article: Utility of plasma: a new road from physics to chemistry

“…The ability of nonequilibrium plasmas to produce atomic oxygen and nitrogen species (which otherwise is a non-trivial task because of the very high dissociation energy barriers) in a variety of radical, excited and ionic states, has led to the possibility of a very effective synthesis of oxide and nitride nanostructures using both low-and atmospheric pressure plasma discharges. [204][205][206] Nano-oxides of some semiconducting elements (e.g. silicon and germanium) and of a large number of light and heavy metals have been successfully produced.…”