Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors

Xu, Haibo; Wang, Xu; Hu, Daobing; Zheng, Feng; Xiao, Juncheng; Lü, Lei; Zhang, Shengdong

doi:10.1016/j.mssp.2022.107113

Cited by 2 publications

(2 citation statements)

References 27 publications

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“…Over the years, significant progress has been made in developing the blue laser diode annealing (BLDA) to recrystallize a-Si on large-sized substrates [18][19][20]. High performance metrics have been achieved on top-gate BLDA-LTPS TFTs with S/D doped by the large area-compatible ion shower [21][22][23][24], while the limited doping depth restricts its industrial application.…”

Section: Introductionmentioning

confidence: 99%

Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n + Layer

Xu,

Wan,

Wang

et al. 2024

IEEE J. Electron Devices Soc.

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In this letter, a high performance and large area feasible top-gate low-temperature polysilicon thin film transistor (LTPS TFT) technology is reported. The poly-Si active layer was formed by crystallizing the plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si) film using the blue laser diode anneal (BLDA) technique. The low resistance of source-drain (S/D) regions were formed from a heavily-doped PECVD a-Si layer. The fabricated top-gate LTPS TFTs exhibit excellent electrical performances, with the carrier mobility more than 556.66 cm 2 /V-s and on/off-current ratio over 1.58×10 7 . This proposed technology is expected to promote the manufacturing lines to the higher generations. Index Terms -Low temperature polysilicon; Thin film transistors; Blue laser diode annealing.

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Section: Introductionmentioning

confidence: 99%

Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n + Layer

Xu,

Wan,

Wang

et al. 2024

IEEE J. Electron Devices Soc.

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“…The traditional LTPS-based devices are fabricated on the substrate with planar structures. A thick gate insulator is used between the active channel and the gate to prevent hard breakdown of the device [27,28]. However, this planar-based structure may hinder potential development, considering the operating voltage and the driving current.…”

mentioning

confidence: 99%

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Chen¹,

Zheng

Yeh

et al. 2023

J. Phys. D: Appl. Phys.

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Currently, thin film transistor (TFT) based on planar structure is widely used in the applications of display panels. However, when the device is scaling-down, new device structures or novel materials should be introduced. In this work, the low temperature polycrystalline silicon (LTPS) TFT with fin-like structure is investigated. On the basis of electrical measurements, the device features good switching characteristics with low operating voltages. However, the Id-Vg sweeping result exhibits off-state leakage, which is known as the gate-induced drain leakage (GIDL) current. The GIDL current is increased with the drain bias and the temperature increasing. To observe the GIDL current degradations, different gate biases with negative bias stress (NBS) and positive bias stress (PBS) are applied. The results show different degradation behaviors. In addition, bias stresses with DC and AC methods are also applied to verify the device reliability. Both threshold voltage (Vt) shift and sub-threshold swing (S.S.) are also extracted to verify the degradations of the device. Finally, the physical models are also proposed to illustrate the degradation behaviors of the LTPS device with a fin-like structure, which can be beneficial to future related development of LTPS-based devices.

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Blue laser diode annealing-enhanced bottom-gate low-temperature Poly-Si thin-film transistors

Cited by 2 publications

References 27 publications

Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n + Layer

Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n + Layer

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

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