Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages

B., L.; Song, Rui; Miao, Yan; Li, C. R.; Wang, Y. Q.; Cao, Zexian

doi:10.1063/1.2179613

Cited by 39 publications

(33 citation statements)

References 17 publications

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“…The sample was deposited onto the Si(1 0 0) wafer in a capacitance-coupled plasma-enhanced chemical vapor deposition system. Temperature of the substrate at the end of deposition was well controlled at below 60 1C by a continual supply of a radio-frequency power as low as 35 W. To optimize the film's properties, a cyclic growth mode [12] was applied so that the sample here was grown for 10 cycles, each for half an hour. The mixture of highpurity silane (previously diluted with hydrogen to 2.0 vol%), hydrogen and nitrogen in a flow rate (in sccm) ratio of SiH 4 :N 2 :H 2 ¼ 8.0:8.0:10 was used as the precursor, and the work pressure was settled at 10 Pa.…”

Section: Methodsmentioning

confidence: 99%

“…Also, visible PL from amorphous compounded SiN x films and silicon nitride nanobelts have been reported [8,9]. By engineering the size of the silicon particles embedded in the silicon nitride matrix fabricated by a low-temperature deposition scheme, such as plasmaenhanced chemical vapor deposition, strong PL in the red to blue range have been measured at room temperature, and a clear correlation can be established between the emission wavelength and the particle size [10][11][12]. But much has to be done to clarify, in addition to the operating mechanisms, the emission features for such a nanostructured composite material, particularly when the size of the silicon particles has been reduced to below 2.0 nm.…”

Section: Introductionmentioning

confidence: 96%

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Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Song

Huang

et al. 2007

Journal of Luminescence

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Song

Huang

et al. 2007

Journal of Luminescence

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“…5 (15). Compared with the silicon nanocrystal luminescence, the lifetime of which is usually in the range of microseconds, the origination of this fast decay is still unclear (34,35,36,37). The competition of non-radiative processes at room temperature might play an important role (28).…”

Section: Ecs Transactions 35 (18) 3-19 (2011)mentioning

confidence: 99%

(Invited) Luminescence Properties of Silicon-Rich Silicon Nitride Films and Light Emitting Devices

Xie

Wang

et al. 2011

ECS Trans.

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Silicon-rich silicon nitride (SiN X ) films have attracted enormous interests due to their promising luminescence properties and well compatibility with current CMOS technique. In this short review, the fabrication process of SiN X was addressed as well as their chemical composition and structure. The optical properties and future applications of the light emitting devices (LEDs) were also discussed. By analyzing the carrier conduction and combination mechanisms, electroluminescence (EL) intensity of LEDs was greatly improved through the following approaches: passivation of the interfacial states between SiN X films and Si substrates through NH 3 plasma pre-treatment and post-annealing process; the balance of carrier injection via SiO 2 electron accelerating layer; increase of the carrier-injection efficiency and light extraction efficiency and the enhancement of radiative recombination efficiency by surface plasmon.

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“…9(d)]. This point has been discussed in detail in our previous publications concerning silicon particles embedded in SiN x matrix [24,25,29]. Note that the emission spectrum that extends to the violet band (below 400 nm or 3.1 eV in photon energy) loses intensity rapidly, and the corresponding photon energy has approached the band gap of the amorphous silicon carbide prepared under similar conditions ( 3.3 eV) [30].…”

mentioning

confidence: 81%

Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

Huang

et al. 2008

Front. Phys. China

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High-density silicon nanoparticles with wellcontrolled sizes were grown onto cold substrates in amorphous SiN x and SiC matrices by plasma-enhanced chemical vapor deposition. Strong, tunable photoluminescence across the whole visible light range has been measured at room temperature from such samples without invoking any post-treatment, and the spectral features can find a qualitative explanation in the framework of quantum confinement effect. Moreover, the decay time was for the first time brought down to within one nanosecond. These excellent features make the silicon nanostructures discussed here very promising candidates for light-emitting units in photonic and optoelectronic applications.Keywords silicon nanoparticles, photoluminescence, quantum confinement effect PACS numbers 78.55.Ap, 78.67.Bf, 78.47.CdSilicon-based light-emitting structures are likely to provide the pivotal technology in future full-silicon optoelectronic integration. Unfortunately bulk silicon is an indirect bandgap (E g ∼1.12 eV) semiconductor which emits light at a negligibly low efficiency. Since the first discovery of visible photoluminescence (PL) from porous silicon at room temperature by Canham in 1990 [1], arduous efforts have been made to squeeze light from silicon, and a great multitude of exciting results, both theoretical and experimental, concerning the optical and electronic properties of diversified structures have been acquired [2−9].For a long period, the fabrication of nanostructured systems which are expected to give appreciable light emission following the quantum confinement effect (QCE) [3,5,9], as confirmed in size-separated silicon nanoparticles [2], has attracted much research interest. Various silicon based structures have been investigated in an effort to obtain applicable light emission. These include, for instance, Si nanocrystals in amorphous silicon matrix [3], free-standing film of silica containing Si nanocrystals [9], silicon nanoparticles embedded in a diamond matrix [10], and so forth. So far, PL in the spectral range from infrared to even ultraviolet has been registered in many silicon nanostructures.As one of the workhorse materials for microelectronics, silicon oxide is the most widely studied among the various matrix choices to quantum confine silicon nanoparticles which are intended to be made into efficient emitting centers. However, the ultimate goal of silicon-based light emitting material design is not the realization of photoluminescence but to obtain applicable electroluminescence. Therefore, carrier injection through the insulating matrix (clearly only possible via the tunneling mechanism) is of practical concern. In this sense, SiO 2 is obviously a bad choice because of its extremely large bandgap (E g ∼ 8.5 eV) -the operation voltage for a light-emitting diode based on Si-in-SiO 2 structure would be unacceptably high. To circumvent this difficulty for later implementations, and also to explore the light emission properties

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Blue-violet photoluminescence from amorphous Si-in-SiNx thin films with external quantum efficiency in percentages

Cited by 39 publications

References 17 publications

Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

(Invited) Luminescence Properties of Silicon-Rich Silicon Nitride Films and Light Emitting Devices

Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

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