Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Ma, Libo; Song, Rui; Huang, Rao; Du, Youwei; Ye, J.P.; Lin, Yuhan; Wang, Y.Q.

doi:10.1016/j.jlumin.2006.10.002

Cited by 4 publications

(4 citation statements)

References 22 publications

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“…5(c)], we see that the most effective excitation occurs at ∼375 nm, as confirmed by the PL excitation spectrum monitored at an emission wavelength of 455 nm (not shown here, see Ref. [11]). Remarkably, a plateau of emission integral intensity appears within 340 to 410 nm.…”

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confidence: 78%

Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

Huang

et al. 2008

Front. Phys. China

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High-density silicon nanoparticles with wellcontrolled sizes were grown onto cold substrates in amorphous SiN x and SiC matrices by plasma-enhanced chemical vapor deposition. Strong, tunable photoluminescence across the whole visible light range has been measured at room temperature from such samples without invoking any post-treatment, and the spectral features can find a qualitative explanation in the framework of quantum confinement effect. Moreover, the decay time was for the first time brought down to within one nanosecond. These excellent features make the silicon nanostructures discussed here very promising candidates for light-emitting units in photonic and optoelectronic applications.Keywords silicon nanoparticles, photoluminescence, quantum confinement effect PACS numbers 78.55.Ap, 78.67.Bf, 78.47.CdSilicon-based light-emitting structures are likely to provide the pivotal technology in future full-silicon optoelectronic integration. Unfortunately bulk silicon is an indirect bandgap (E g ∼1.12 eV) semiconductor which emits light at a negligibly low efficiency. Since the first discovery of visible photoluminescence (PL) from porous silicon at room temperature by Canham in 1990 [1], arduous efforts have been made to squeeze light from silicon, and a great multitude of exciting results, both theoretical and experimental, concerning the optical and electronic properties of diversified structures have been acquired [2−9].For a long period, the fabrication of nanostructured systems which are expected to give appreciable light emission following the quantum confinement effect (QCE) [3,5,9], as confirmed in size-separated silicon nanoparticles [2], has attracted much research interest. Various silicon based structures have been investigated in an effort to obtain applicable light emission. These include, for instance, Si nanocrystals in amorphous silicon matrix [3], free-standing film of silica containing Si nanocrystals [9], silicon nanoparticles embedded in a diamond matrix [10], and so forth. So far, PL in the spectral range from infrared to even ultraviolet has been registered in many silicon nanostructures.As one of the workhorse materials for microelectronics, silicon oxide is the most widely studied among the various matrix choices to quantum confine silicon nanoparticles which are intended to be made into efficient emitting centers. However, the ultimate goal of silicon-based light emitting material design is not the realization of photoluminescence but to obtain applicable electroluminescence. Therefore, carrier injection through the insulating matrix (clearly only possible via the tunneling mechanism) is of practical concern. In this sense, SiO 2 is obviously a bad choice because of its extremely large bandgap (E g ∼ 8.5 eV) -the operation voltage for a light-emitting diode based on Si-in-SiO 2 structure would be unacceptably high. To circumvent this difficulty for later implementations, and also to explore the light emission properties

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confidence: 78%

Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

Huang

et al. 2008

Front. Phys. China

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“…As demonstrated in our early publications [10][11][12][13][14]19], the average size for silicon particles achieved in SiC is less than that in SiN x prepared under similar growth conditions. Yet the quantum confinement PL emission may have a shorter wavelength in SiN x than in SiC since the former provides a stronger confinement to the silicon nanoparticles.…”

Section: Resultsmentioning

confidence: 74%

“…This clearly shows that PL properties for a multilayered structure of sufficiently narrower individual Si-in-SiC layers are evidently different from that of the simple Si-in-SiC film in which the amorphous SiC matrix provides a homogeneous potential field for the confined particles. Besides, it also facilitates an enhanced light emission in such a multilayered, single-matrix system [14,19]. The effect of the multilayered structure will be more pronounced in the SiC/SiN x structure where the two compounds have largely differing bandgaps, especially when the layer thickness is sufficiently small that it can be taken as a quantum well.…”

Section: Resultsmentioning

confidence: 99%

“…In the past nearly two decades, arduous efforts have been made to squeeze light from silicon, and a great multitude of exciting results concerning the optical and electronic properties of diverse silicon nanostructures have been acquired [4][5][6][7][8][9][10][11][12]. It is now well established that silicon nanoparticles embedded in various silicon compound matrices can act as excellent light-emitting centers so that strong photoluminescence (PL) across the whole range of visible light has been realized [6,[9][10][11][12][13][14][15]. At the current moment, the size of silicon particles has been pushed towards 1.0 nm both 4 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

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Effect of well confinement on photoluminescence features from silicon nanoparticles embedded in an SiC/SiN_xmultilayered structure

Huang

et al. 2008

Nanotechnology

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Light emission from a quantum well-dot structure comprising amorphous Si nanoparticles (∼1.4 nm) embedded in SiC/SiN(x) multilayers (a few tens nm thick for individual sublayers) was investigated. Strong blue-green photoluminescence was measured at room temperature on the as-deposited samples and the spectral profile shows some markedly modulated features. It displays flattened profiles of roughly equal intensity when silicon particles in both nitride and carbide sublayers can be effectively excited, whereas when the nitride sublayer is less effectively activated at longer excitation wavelength the photoluminescence is pinned (here at 500 nm), showing a rather narrow, slowly decreasing profile. The phenomenon of narrowed emission is also observed in the Si-in-SiC multilayer consisting of particles of varying size distributions. Resonance energy transfer processes among particles modified by carrier confinement may provide a reasonable explanation.

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Time-resolved photoluminescence from Si-in-SiNx/Si-in-SiC quantum well-dot structures

Huang

et al. 2013

Optical Materials

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Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Cited by 4 publications

References 22 publications

Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

Effect of well confinement on photoluminescence features from silicon nanoparticles embedded in an SiC/SiN_xmultilayered structure

Time-resolved photoluminescence from Si-in-SiNx/Si-in-SiC quantum well-dot structures

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Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Cited by 4 publications

References 22 publications

Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

Synthesis and photoluminescence studies of silicon nanoparticles embedded in silicon compound films

Effect of well confinement on photoluminescence features from silicon nanoparticles embedded in an SiC/SiNxmultilayered structure

Time-resolved photoluminescence from Si-in-SiNx/Si-in-SiC quantum well-dot structures

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Effect of well confinement on photoluminescence features from silicon nanoparticles embedded in an SiC/SiN_xmultilayered structure