Bond arrangement and optical band gap in GexAs40 − xS(Se)60 glasses and thin films

Arsova, D.

doi:10.1016/0022-3697(96)00319-8

Cited by 34 publications

(28 citation statements)

References 20 publications

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“…It is clear that Sb-S contributions to the total g͑r͒ dominate in the Ge x Sb 40−x S 60 glasses with high Sb content, whereas contribution from Ge-Sb correlations increases as the Ge content becomes larger. This experimental finding regarding Ge-Sb correlations agrees well with bond statistics within random bond network model 25,26 and actually with Feltz's 12 suggestion about the existence of As 2 Ge structural units and/or Ge-As bonds in Ge x As 40−x S 60 ternaries for compositions with x Ͼ 30. This means that in the alloys studied, random bonding is dominant in comparison with the ordered bond network model 25,26 in the framework of which the weakest bonds such as Ge-Sb͑As͒ in GeSb͑As͒-S systems do not contribute to the bond fractions.…”

Section: Discussionsupporting

confidence: 88%

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

Kavetskyy¹,

Shpotyuk²,

Kaban³

et al. 2008

The Journal of Chemical Physics

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Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the ␥-irradiated and annealed after ␥-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak ͑FSDP͒ is detected at around 1.1 Å −1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between ␥-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 Å are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts.

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Section: Discussionsupporting

confidence: 88%

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

Kavetskyy¹,

Shpotyuk²,

Kaban³

et al. 2008

The Journal of Chemical Physics

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“…We can see also from Tables 1 and 2 that the spectral position of χ max correlates with the change of the band gap E g of the investigated glasses [11].…”

Section: Eevmentioning

confidence: 76%

On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses

Butkiewicz

Golovchak²,

Kovalskiy³

et al. 2001

Radiation Effects and Defects in Solids

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Abstract.We have investigated the influence of high-energy γ-irradiation on the optical transmission spectra of ternary Ge-As-S chalcogenide glasses of the stoichiometric As 2 S 3 -GeS 2 and non-stoichiometric As 2 S 3 -Ge 2 S 3 systems. A long-wave shift of the fundamental absorption edge is observed for all glasses. Two different components of radiation-induced changes were specified: static (residual) and dynamic (time dependent) ones. The dynamic component is mathematically described by the exponential and power functions in respect to post-irradiation periods. It is shown that quantitative features of the observed self-restoration phenomena in the irradiated glasses are closely related to their chemical compositions and stoichiometry.

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“…This behavior can be well explained by adopting that both As-and Ge-related atomic sub-systems (As-based AsS 3/2 pyramids and Ge-based GeS 4/2 tetrahedra) are sensitive to radiation influence, while Sb-related subsystem leads only to a weakening in radiation-induced changes observed in vitreous germanium sulphides owing to extremely high metalisation level of corresponding covalent chemical bonds within SbS 3/2 pyramids [14]. Therefore, the observed compositional dependence in g 0 parameter for stoichiometric ChG is determined mainly by effectiveness of radiationinduced defect formation within each atomic sub-system.…”

Section: Discussionmentioning

confidence: 89%

“…The homopolar bonds in bulk stoichiometric ChG obtained with melt quenching are possible only in under-margin concentrations, being more character for thermally deposited ChG-based thin films [5]. A small amount of Geenriched Ge 2 S 6/2 structural groups with homopolar Ge-Ge covalent bonds appear only in non-stoichiometric As 2 S 3 -Ge 2 S 3 compositions at high Z (Z > 2.7), while Ge-As covalent bonds are of negligible probability in this system [14].…”

Section: Discussionmentioning

confidence: 99%

“…As to the investigated ternary Ge-As(Sb)-S systems, they are built mainly with 2D-dimensional pyramidal AsS 3/2 (or SbS 3/2 ) and 3D-dimensional tetrahedral GeS 4/2 structural blocks with energetically-favorable heteropolar As-S (Sb-S) and Ge-S covalent bonds, respectively [5,14]. The homopolar bonds in bulk stoichiometric ChG obtained with melt quenching are possible only in under-margin concentrations, being more character for thermally deposited ChG-based thin films [5].…”

Section: Discussionmentioning

confidence: 99%

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