Bonding and interlayer charge transfer in the solid state compound Na1.9Cu2Se2Cu2O

Chacon, Gerardo; Long, Xiangyun; Zheng, Chong

doi:10.1016/0925-8388(94)01284-o

Cited by 4 publications

(3 citation statements)

References 24 publications

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“…On the other hand, as is known, the vacancies are intrinsically constituted by a positively or negatively charged center surrounded by oppositely charged carriers. Thus, they can assistant charge transport by transfering charge carriers. − For example, recent experiments have shown that interlayer charge transfer can be achieved in BiCuSeO through the introduction of heterolayer Bi/Cu dual vacancies . BiCuSeO possesses a unique layered structure consisting of alternating [Bi 2 O 2 ] 2+ and [Cu 2 Se 2 ] 2– sublayers along the c axis, presenting us with a perfect platform for clear research on the effect of the dual vacancies.…”

Section: Defect-mediated Atom or Charge Migration Effectmentioning

confidence: 99%

Defect Chemistry for Thermoelectric Materials

et al. 2016

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Defect engineering, at the core of the field of thermoelectric studies, serves as a scaffold for engineering the intrinsic electrons' and phonons' behaviors to tailor thermoelectric parameters through the direct impacts of band engineering and phonon engineering, which can modify electronic band structure and phonon transport behavior to enhance the power factor (PF = σS) and reduce the lattice thermal conductivity (κ). By virtue of the implementation of defect engineering, the past decades have witnessed great progress in thermoelectric research through synergistic optimization of the inter-correlated transport parameters, and substantial enhancement has been achieved in the performance of various thermoelectric materials. However, current established optimization strategies based on defect engineering are mainly focused on tuning the electronic and phonon structures, while modulation by additional degrees of freedom caused by defects has long been neglected. In this Perspective, we focus on our interest in the under-exploited aspects of defect engineering, which include defect-related spin effects, defect-mediated atom or charge migration effects, and defect-related interface effects. Through these new points of view, we hope to arouse intense attention to the overlooked parts of defect engineering and combine them with current optimization strategies from the perspective of multiple degrees of freedom modulation, to enable the full potential of defect engineering for boosting thermoelectric performance. Finally, based on the discussion herein and current achievements in thermoelectric research, some personal perspectives on the future of this field are also presented.

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Section: Defect-mediated Atom or Charge Migration Effectmentioning

confidence: 99%

Defect Chemistry for Thermoelectric Materials

et al. 2016

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“…This might be formulated as Na 1.9 OCu 2 Cu 2 Se 2 for comparison with the other compounds. It was found to be slightly Na-deficient (the ideal formula would be Na 2 Cu 4 OSe 3 ), and band structure calculations showed that the holes introduced by this slight deficiency should reside in bands derived from the Cu 2 Se 2 layers, which may readily be depleted as described below. In contrast to the situation in the compounds Sr 2 ZnO 2 Cu 2 Ch 2 and Ch 2 OFe 2 O 2 La 2 (Ch = S, Se), in Na 2 OCu 2 Cu 2 Se 2 the ions that lie closest to the Na + cation are the Se 2− ions in the Cu 2 Se 2 layer and the Cu + ions in the Cu 2 O layers, with the result that Cu + −Na + repulsion increases the interplanar separation relative to that in Sr 2 ZnO 2 Cu 2 Ch 2 or Ch 2 OFe 2 O 2 La 2 (Ch = S, Se).…”

Section: Introductionmentioning

confidence: 98%

Structures, Physical Properties, and Chemistry of Layered Oxychalcogenides and Oxypnictides

et al. 2008

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A series of layered oxychalcogenide and oxypnictide solids is described that contain oxide layers separated by distinct layers, which contain the softer chalcogenide (S, Se, Te) or pnictide (P, As, Sb, Bi) anions. The relationships between the crystal structures adopted by these compounds are described, and the physical and chemical properties of these materials are related to the structures and the properties of the elements. The properties exhibited by the oxychalcogenide materials include semiconductor properties, for example, in LaOCuCh (Ch = chalcogenide) and derivatives, unusual magnetic properties exhibited by the class Sr 2MO 2Cu 2-deltaS 2 (M = Mn, Co, Ni), and redox properties exhibited by the materials Sr 2MnO 2Cu 2 m-0.5 S m+1 ( m = 1-3) and Sr 4Mn 3O 7.5Cu 2Ch 2 (Ch = S, Se). Recent results in the oxychalcogenide area are reviewed, and some new results on the intriguing series of compounds Sr 2MO 2Cu 2-deltaS 2 (M = Mn, Co, Ni) are reported. Oxypnictides have received less recent attention, but this is changing: a new frenzy of research is underway following the discovery of high-temperature superconductivity (>40 K) in derivatives of the layered oxyarsenide LaOFeAs. The early results in this exciting new area will be reviewed.

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“…Only a few studies have examined layered late-transition-metal oxychalcogenides that are composed of transition-metal oxide and transition-metal chalcogenide layers. The first reported example, Na 1.9 Cu 2 Se 2 Cu 2 O, , exhibits metallic behavior below 250 K. Combinations of transition-metal oxide and chalcogenide layers are of interest because of possible novel electronic and magnetic properties resulting from interactions between the two types of layers. Here, we report the synthesis and characterization of the first layered cobalt oxysulfides, A 2 Cu 2 CoO 2 S 2 (A = Sr, Ba), which contain unusual square-planar CoO 2 layers.…”

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confidence: 99%

A₂Cu₂CoO₂S₂ (A = Sr, Ba), A Novel Example of a Square-Planar CoO₂ Layer

Zhu¹,

Hor²,

Jacobson³

et al. 1997

J. Am. Chem. Soc.

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Bonding and interlayer charge transfer in the solid state compound Na1.9Cu2Se2Cu2O

Cited by 4 publications

References 24 publications

Defect Chemistry for Thermoelectric Materials

Defect Chemistry for Thermoelectric Materials

Structures, Physical Properties, and Chemistry of Layered Oxychalcogenides and Oxypnictides

A₂Cu₂CoO₂S₂ (A = Sr, Ba), A Novel Example of a Square-Planar CoO₂ Layer

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Bonding and interlayer charge transfer in the solid state compound Na1.9Cu2Se2Cu2O

Cited by 4 publications

References 24 publications

Defect Chemistry for Thermoelectric Materials

Defect Chemistry for Thermoelectric Materials

Structures, Physical Properties, and Chemistry of Layered Oxychalcogenides and Oxypnictides

A2Cu2CoO2S2 (A = Sr, Ba), A Novel Example of a Square-Planar CoO2 Layer

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Product

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A₂Cu₂CoO₂S₂ (A = Sr, Ba), A Novel Example of a Square-Planar CoO₂ Layer