Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

Abstract

CaBi2Nb2O9 thin film capacitors were fabricated on SrRuO3-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi2Nb2O9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density Wrec ≈ 69 J/cm3 and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 109 charge-discharge cycles) and a good thermal stability (from −170 to 150 °C) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.

Excellent Energy Storage Performance in Bi(Fe0.93Mn0.05Ti0.02)O3 Modified CaBi4Ti4O15 Thin Film by Adjusting Annealing Temperature

“…Figure 7 summarizes a serious of results on the energy storage performance of Aurivillius ferroelectric films [ 12 , 13 , 27 , 28 , 58 , 59 , 60 ]. In this study, the CBTi-BFO thin film annealing at 500 °C possesses a relatively high ƞ (~78%) superior than BaLa 0.2 Bi 3.8 Ti 4 O 15 (BLBT~60%) and Bi 3.25 La 0.75 Ti 3 O 12 /BiFeO 3 /Bi 3.25 La 0.75 Ti 3 O 12 (BLT/BFO/BLT~74%), but inferior to Ba 2 Bi 4 Ti 5 O 18 (BBT~92%), 0.6BaTiO 3 -0.4Bi 3.25 La 0.75 Ti 4 O 12 (0.6BT-0.4BLT~84%), CaBi 2 Nb 2 O 9 (CBNO~82%), Sr 2 Bi 4 Ti 5 O 18 (SBT~81%), Bi 3.25 La 0.75 Ti 3 O 12 -BiFeO 3 (BLT-BFO~80%).…”

“… Summary of recently reported the core parameters of E b , W rec and ƞ for energy storage properties of representative Aurivillius ferroelectrics film [ 12 , 13 , 27 , 28 , 58 , 59 , 60 ]. …”

Achieving a Record-High Capacitive Energy Density on Si with Columnar Nanograined Ferroelectric Films

“…7−13 Such a research field aims for applications in high-power electronic devices and electrical systems, such as hybrid electric vehicles, medical defibrillators, smart grids, and consumer electronics, etc. 14−19 The energy density and energy efficiency of a ferroelectric capacitor can be calculated from its characteristic polarization−electric field (P−E) loop using the following equations: 1,18,20 the stored energy density W c = ∫ 0 P m E dP, the recoverable energy density W rec = ∫ P r P m E dP, and the energy efficiency…”

“…Ferroelectrics with a large dielectric constant and delayed polarization saturation can store or supply electricity of very high energy and power densities; − hence, they have become the center of attention in the emerging research field of capacitive energy storage. − Such a research field aims for applications in high-power electronic devices and electrical systems, such as hybrid electric vehicles, medical defibrillators, smart grids, and consumer electronics, etc. − The energy density and energy efficiency of a ferroelectric capacitor can be calculated from its characteristic polarization–electric field ( P–E ) loop using the following equations: ,, the stored energy density W c = ∫ 0 P m E d P , the recoverable energy density W rec = ∫ P r P m E d P , and the energy efficiency , where P m and P r are the maximum polarization and remnant polarization of the ferroelectric, respectively, and E is the applied electric field. A high recoverable energy density W rec demands a large P m , a low P r , and a high breakdown field ( E b ).…”

(Mg1/3Ta2/3)4+ complex ion modified BNBST relaxor ferroelectric ceramics for energy storage applications

“…where W, W rec , η, P max , P r and E refer to total energy storage density, recoverable energy storage density, energy storage efficiency, maximum polarization intensity, remnant polarization intensity and applied electric field, respectively. From the above calculation formula, the conditions for obtaining remarkable W rec usually require that the materials should possess high ∆P (P max -P r ) and high electrical breakdown strength E b [11,12] . It is well known that antiferroelectric Pb-based materials with double hysteresis loops present high energy storage density.…”