“…Compared to their 3D counterparts, 2D semiconductors exhibit enhanced many-body interactions due to reduced dielectric screening and quantum confinement, resulting in significant exciton binding energy (e.g., up to 500 meV for monolayer semiconductors) and ultrafast electron–electron scattering within femtoseconds. − Additionally, the 2D geometry and atomic flatness without dangling bonds guarantee high density of states and allow readily interfacing 2D semiconductors with charge extraction components to achieve ultrafast interfacial charge transfer within 100 fs. ,− The combination of ultrafast electron–electron scattering and interfacial charge transfer in 2D semiconductors suggests exciting potential to explore and realize efficient hot carrier harvesting. Indeed, with the help of powerful transient spectra, efficient hot carrier transfer from graphene and other 2D semiconductors before interband electron–electron scattering has been observed, and multiple exciton generation and transfer with high yield and low threshold have been reported in MoTe 2 and black phosphorus (BP). − In this Perspective, we highlight three primary directions: (1) hot electron harnessing from graphene; (2) hot electron transfer from 2D semiconductors; and (3) multiexciton generation in 2D semiconductors. Through these experimental examples, we underscore the importance of the unique properties of 2D semiconductors, such as high density of states, strong Coulomb interaction, and ultrafast interfacial charge transfer, making them an exceptional platform for harnessing hot carriers.…”