Boosting the electron mobility of solution-grown organic single crystals via reducing the amount of polar solvent residues

Abstract

The electron mobility of solution-grown TIPS-TAP single crystals has been boosted to 13.3 cm2V−1s−1, after removing the polar solvent residues.

Electron Mobility Exceeding 10 cm2 V−1 s−1 and Band‐Like Charge Transport in Solution‐Processed n‐Channel Organic Thin‐Film Transistors

“…[6] The electron mobility of the vacuum-deposited OTFTs (5.1 ± 1.2 cm 2 V −1 s −1 ) is one of the highest values for vacuumdeposited n-channel OTFTs. It is slightly higher than the field effect mobility of the vacuum deposited OTFTs of C 60 (4.7 ± 0.41 cm 2 V −1 s −1 ), [25] but lower than that of bis(cyclohexyl) naphthalene tetracarboxylic diimide (6.2 ± 1.15 cm 2 V −1 s −1 ).…”

“…In comparison, n-channel OTFTs with electron mobility exceeding 10 cm 2 V −1 s −1 are still very rare. [5,6] Despite the improvement of mobility, understanding charge transport in organic semiconductors in OTFTs remains an experimental and theoretical challenge. [7] There is no universal model for charge transport in organic semiconductors.…”

Trends in molecular design strategies for ambient stable n-channel organic field effect transistors

“…Thin film annealing procedures and associated electrical performance of an OSC were correlated by Kim et al 76 Furthermore, removing the residues of a polar solvent with heat treatment assists in achieving higher electron mobilities. 77 Thin film morphology is also dependent on the method of film preparation. Deposition techniques, such as drop-casting, spin-coating, ink jet printing, thermal evaporation, and solution shearing, are applied to prepare high quality thin films with precise control over film thickness.…”

“…Recently, an unprecedented n-channel mobility of 13.3 cm 2 V À1 s À1 was observed with single crystals of 6c at room temperature under vacuum after removal of the polar solvent residues. 77 Substitution of carbon with phosphorus was predicted theoretically to decrease the LUMO energies and to lead to record low reorganization energies. Therefore phospaacenes are predicted to be excellent candidates for n-channel OFETs.…”

Enhanced performance of field-effect transistors based on C60 single crystals with conjugated polyelectrolyte

“…On the one hand, the conductive channel of the charge carriers forms at the interface between the semiconductor and the dielectric layer [7]. Accordingly, the device improvement is achieved by chemically modifying the molecular structures of the semiconductors [8][9][10][11][12][13][14][15] and the gate dielectrics [16][17][18][19][20][21], adjusting their *Corresponding authors (email: msfhuang@scut.edu.cn; hanying_li@zju.edu.cn) molecular aggregation structures [21][22][23][24][25][26][27][28], and eliminating the charge traps near the channel [29][30][31]. On the other hand, considering the configuration of FETs, charge carriers need to be injected through the electrodes before they reach the conductive channel and thus efficient carriers injection is of great importance to high-performance FETs.…”