Solution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm(2) V(-1) s(-1) at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport.

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The electron mobility of solution-grown TIPS-TAP single crystals has been boosted to 13.3 cm2V−1s−1, after removing the polar solvent residues.

Herein, we report two new types of twisted polycyclic arenes (2 a, b and 3 a, b) with constitutionally isomeric π-backbones, which are synthesized by controlling the Scholl reaction of 1,2,4,5-tetra(naphth-2-yl)-3,6-diphenylbenzene (1) with properly positioned electron-donating substituents. With a polycyclic backbone containing two [5]helicene and four [4]helicene moieties, 2 a and b are new members of multiple helicenes with interesting stereochemistries. The as-synthesized 2 a and b are the twisted isomers, and thermal isomerization of twisted-2 b results in anti-2 b, a more stable stereoisomer. Both twisted- and anti-2 b have been fully characterized, and the thermal isomerization of twisted-2 b has been studied with H NMR spectroscopy and DFT calculations. Compounds 3 a and b are new members of twistacenes, the benzannulated pentacene backbone of which exhibits an end-to-end twist as found from the crystal structure. Twisted- and anti-2 b are also found to function as p-type semiconductors in solution-processed thin film transistors, whereas the thin films of 3 b appear insulating presumably due to the lack of π-π interactions.

Self‐assembled monolayer (SAM) is usually applied to tune the interface between dielectric and active layer of organic field‐effect transistors (OFETs) and other organic electronics, a time‐saving, direct patterning approach of depositing well‐ordered SAMs is highly desired. Here, a new direct patterning method of SAMs by stamp printing or roller printing with special designed stamps is introduced. The chemical structures of the paraffin hydrocarbon molecules and the tail groups of SAMs have allowed to use their attractive van der Waals force for the direct patterning of SAMs. Different SAMs including alkyl and fluoroalkyl silanes or phosphonic acids are used to stamp onto different dielectric surfaces and are characterized by water contact angle, atomic force microscopy, X‐ray diffraction, and attenuated total reflectance Fourier transform infrared. The p‐type dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (DNTT) and n‐type F16CuPc OFETs show competitive mobility as high as 3 and 0.018 cm2 V−1 s−1, respectively. This stamp printing method also allows to deposit different SAMs on certain regions of same substrate, and the complementary inverter consists of both p‐type and n‐type transistors whose threshold voltages are tuned by stamp printing SAMs and shows a gain higher than 100. The proposed stamp or roller printing method can significantly reduce the deposition time and compatible with the roll‐to‐roll fabrication.