Boosting the photovoltaic performance of MoS2/Si heterojunction solar cells with thiourea-doped MoS2 films

Huang, Yanhong; Shi, Xiaomeng; Liu, Xiaoyu; Cong, Rongjuan; Sun, Yi; Lu, Wanbing; Yu, Wei

doi:10.1016/j.micrna.2022.207241

Cited by 6 publications

(4 citation statements)

References 28 publications

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“…Due to their band gap energy and thickness-dependent behavior, 2D materials such as molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ) have recently gained noteworthy attention as materials for making solar cells. MoS 2 and WSe 2 monolayers have a direct band gap while their bulk forms can be used to produce indirect semiconductors [1,4,[15][16][17][18]. Among the TMDCs for solar cells, tungsten diselenide (WSe 2 ) is the most promising candidate mainly due to its bulk band gap energy of ~1.3 eV.…”

Section: Introductionmentioning

confidence: 99%

A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency

Kim

Pawar

Park

et al. 2023

International Journal of Energy Research

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Transition metal dichalcogenide (TMDC) materials are attractive candidates for 2D solar cell devices thanks to their straightforward integration with various substrates and traditional semiconductor technologies, wide band gap ranges over the visible light spectrum, and high absorption coefficient values. Although there are several previous reports on the fabrication of 2D material-based solar cells, difficult and complex processes in the fabrication are highly required to be modified for wider use in daily life applications. Photolithography, the most commonly used manufacturing process for TMDC-based solar cells, is complicated. In this study, we demonstrate that the fabrication of 2D tungsten diselenide (WSe2) by adopting a wet transfer process with thermal release tape simplifies the manufacturing steps for TMDC-based solar cell devices. This simplification not only reduces the production cost by excluding several factors such as transmittance, thermal expansion, surface flatness, and durability but also improves the yield. Furthermore, a proof-of-concept demonstration of creating a WSe2/Si junction with an aluminum oxide (Al2O3) antireflective coating provided a power conversion efficiency of 6.39%, which is a significant improvement over that of a WSe2/Si solar cell without the antireflective coating layer (1.08%).

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Section: Introductionmentioning

confidence: 99%

A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency

Kim

Pawar

Park

et al. 2023

International Journal of Energy Research

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“…Salih Omar fabricated a MoS 2 /n-Si Schottky solar cell achieving an efficiency of 2.46% [19]. Huang et al fabricated a thiourea-doped MoS 2 /p-Si heterojunction solar cell achieving an efficiency of 9.81% [20]. Tsai et al prepared a monolayer n-MoS 2 /p-Si heterojunction solar cell achieving an efficiency of 5.23%13.…”

Section: Introductionmentioning

confidence: 99%

Effect of p-MoO_x interfacial layer on the photovoltaic performances of p-MoS₂/n-Si heterojunction solar cells by theoretical simulation

Deng,

Lu,

Xiong

et al. 2023

Phys. Scr.

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As one of particular 2D transition metal dichalcogenide materials, the outstanding properties of MoS2 enable the promising formation of superior homo or heterojunction solar cells. However, in the process of introducing oxygen treatment to modify the interface defects of MoS2/Si solar cells, or modulate the Fermi level of MoS2 films, a thin layer of p-MoOx capping layer is generally produced next to MoS2. In order to essentially clarify the functional mechanism of MoOx layer, p-MoS2/n-Si heterojunction solar cells with or without MoOx interfacial layer are simulated using SCAPS software. The influences of band gap, electron affinity, thickness of MoS2 and front contact barrier height on the performances of p-MoS2/n-Si solar cells are theoretically studied. It is demonstrated that p-MoS2/n-Si solar cell can achieve a high efficiency of 21.9%. With the appearance of MoOx, the effect of location, electron affinity and thickness of MoOx on the photovoltaic performances p-MoS2/n-Si heterojunction solar cells are studied. The efficiencies of p-MoS2/p-MoOx/n-Si solar cells are significantly reduced to be lower than 11.4%, p-MoOx/p-MoS2/n-Si solar cells maintain superior efficiencies over 20% in a large range of electron affinities lower than 3.0 eV for p-MoOx. Consequently, in modulating the Fermi level of MoS2 films through MoOx doping, p-MoOx capping layer is suggested to be located between MoS2 and front electrode rather than at p-MoS2/n-Si interface, to maintain the excellent performances of p-MoS2/n-Si solar cells.

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“…Two-dimensional transition metal materials have eminent applications in optoelectronic devices (Huang et al 2022;Patel et al 2022;Yu et al 2022) due to their extraordinary characteristics, such as excellent mechanical and thermal stability besides the strong electron-hole confinement. Different 2D materials like MXenes have been applied in PSCs in recent years due to their extraordinary optoelectronic, chemical, and mechanical properties (Guo et al 2018;Jakšić et al 2020;Kumar et al 2021;Shah et al 2021;Sudheer et al 2021).…”

Section: Introductionmentioning

confidence: 99%

The device simulation of MXene-added hole-transport free perovskite solar cells

Azadi,

Asgharizadeh

2023

Int. J. Mod. Phys. B

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Perovskite solar cells (PSCs) without hole transport layer (HTL) based on organic and inorganic metal halide perovskite have received vast consideration in recent years. For predigestion of device structure and construction process, the exclusion of the HTL is a marvelous way. By detaching the HTL part of the devices, we could reduce the cost and complexity of the structures. Currently, a novel 2D material named Ti3C2 MXene with high electron mobility, excellent metallic conductivity and functionalized surface groups applied for tuning the energy offsets has been reported to be added in the perovskite absorber layer, leading to a remarkable power conversion efficiency (PCE) improvement. In this work, the role of MXenes in controlling the work function of the involved layers to modify the band alignment towards better performance of the cells is explained. Two HTL free structures of FTO/mTiO2/cTiO2/MAPbI3/Spiro-OMeTAD/Au named as HFRC, and FTO/mTiO2+MXene/cTiO2+MXene/MXene/MAPbI3+MXene/Spiro-OMeTAD/Au named as HFMC were simulated by SCAPS-1D software to study the response of the photovoltaic devices and obtain the highest possible efficiency considering the physics behind. To the best of our knowledge, this is the first time such structures and the results of the current simulation are studied that may be used as a guideline for other practical purposes. We present a modeling procedure that optimizes the thickness of the involved layers and specifies the optimum level of the doping concentration. We also show that by optimizing the work function of the back contact, the device performance witnesses a significant improvement, proving the considerable role of the back contact in these cells. The simulated HTL-free devices illustrate attainably PCEs of about 20.32% and 21.04% for the cells without and with MXene, under AM 1.5G illumination and absorption up to 760 (nm).

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Boosting the photovoltaic performance of MoS2/Si heterojunction solar cells with thiourea-doped MoS2 films

Cited by 6 publications

References 28 publications

A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency

A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency

Effect of p-MoO_x interfacial layer on the photovoltaic performances of p-MoS₂/n-Si heterojunction solar cells by theoretical simulation

The device simulation of MXene-added hole-transport free perovskite solar cells

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Boosting the photovoltaic performance of MoS2/Si heterojunction solar cells with thiourea-doped MoS2 films

Cited by 6 publications

References 28 publications

A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency

A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency

Effect of p-MoOx interfacial layer on the photovoltaic performances of p-MoS2/n-Si heterojunction solar cells by theoretical simulation

The device simulation of MXene-added hole-transport free perovskite solar cells

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Effect of p-MoO_x interfacial layer on the photovoltaic performances of p-MoS₂/n-Si heterojunction solar cells by theoretical simulation