2016
DOI: 10.1016/j.nanoen.2016.07.002
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Boosting thermoelectric performance of p-type SiGe alloys through in-situ metallic YSi2 nanoinclusions

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Cited by 88 publications
(65 citation statements)
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“…Ahmad et al reported the enhanced zT value of 1.81 in the P-type SiGe alloys by the incorporation of metallic Yttrium silicide nanoparticles [89]. The thermal conductivity is reduced by YSi 2 nano-inclusions due to the formation of coherent states with SiGe matrix and also due to the reduction of grain size [89].…”
Section: Sige Alloysmentioning
confidence: 99%
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“…Ahmad et al reported the enhanced zT value of 1.81 in the P-type SiGe alloys by the incorporation of metallic Yttrium silicide nanoparticles [89]. The thermal conductivity is reduced by YSi 2 nano-inclusions due to the formation of coherent states with SiGe matrix and also due to the reduction of grain size [89].…”
Section: Sige Alloysmentioning
confidence: 99%
“…Such high zT resulted from Figure 15. Temperature dependence of zT for recently developed efficient SiGe alloy thermoelectric [190,191,89].…”
Section: Half-heusler Alloysmentioning
confidence: 99%
“…This is because in common thermoelectric materials, such as PbTe, a large * s.foster@warwick.ac.uk portion of the phonons have mean-free paths for scattering on the order of nanometers [29]. This technique is therefore widely used to enhance thermoelectric performance in a broad range of materials, including BiTe [30,31], PbTe [23,32,33], SiGe [16,34,35], ZnSb [25,36], FeSi [37], MnSi [38], SnTe [39], PbS [40], CuSe [41], YbCoSb [42], and ZrNiSn [43]. Indeed, by embedding nanoinclusions within PbTe in a hierarchical manner, record high ZT = 2.2 values were achieved due to drastic reductions in κ, but also due to retaining high power factors [23].…”
Section: Introductionmentioning
confidence: 99%
“…While the impact of nanoinclusions on the thermal conductivity is well documented [18,45], previous works are not as clear on their impact on the power factor, with results varying significantly, from only small influence [30,31,34,46], to large potential improvements [25,36,42,47]. Thus, it is imperative that a high level of understanding on the influence of nanoinclusions on the power factor, both qualitative and quantitative, is also established, if ZT is to be maximized.…”
Section: Introductionmentioning
confidence: 99%
“…The Si x Ge 1−x H 30 alloys are predicted to have finite gaps in the range of 1.09-2.29 eV for 0 ≤ x ≤ 1. Ge and Si are known to be completely miscible in any ratio, and GeSi random alloys have been investigated for many years [31][32][33] . However, the creation of siligenes and their derivatives have rarely been reported.…”
mentioning
confidence: 99%