Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films

Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure

“…The time for doping was fixed at 40 min. The doping process is accompanied by Si 1 À x Ge x film crystallization [15]. The sheet resistance of 1.5-2.5 MV/5 was measured by four-point probe technique on the oxidized substrates.…”

Rectifying characteristics of sputter-deposited SiGe diodes

“…After standard RCA cleaning and a diluted hydrofluoride dip, these substrates were loaded into an IBS system where a-SiGe film deposition was done. 7,9 The thickness of deposited SiGe film was in situ monitored by a quartz oscillator and verified by a stylus after deposition. The thickness of SiGe film used in this work is 300 nm.…”

“…Solid BN and liquid POCl 3 sources were used for boron and phosphorus diffusion ͑Phos-diffusion͒, respectively. 9 The temperature for p-type doping ranges from 650 to 800°C, while the temperature for n-type doping a͒ Electronic mail: gpru@fudan.edu.cn ranges from 600 to 800°C. X-ray diffraction ͑XRD͒ spectrum, sheet resistance, carrier concentration, and mobility were measured on oxidized substrates by an x-ray diffractometer, four-point probe ͑FPP͒, and Hall measurements.…”

“…For B diffused SiGe film, the mobility may be 1 order of magnitude lower than that of Phos-diffused SiGe film. 9 Therefore the maximum hole concentration can be estimated to be on the order of 10 17 cm Ϫ3 for B-diffused SiGe films.…”

“…[6][7][8] We previously reported the doping and crystallization behaviors in ion-beam sputtering ͑IBS͒ deposited a-SiGe films after the conventional dopant diffusion process. 9 Both n-and p-type poly-SiGe films with high mobility can be obtained after phosphorus and boron diffusion. The preliminary results indicate that the films can be used for device fabrication.…”