Boron carbide/n-silicon carbide heterojunction diodes

Abstract

Adenwalla, Shireen; Welsch, P.; Harken, A.; Brand, Jennifer I.; Sezer, A.; and Robertson, Brian W., "Boron carbide/n-silicon carbide heterojunction diodes" (2001). Faculty Publications from Nebraska Center for Materials and Nanoscience. 85.

Boron carbide based solid state neutron detectors: the effects of bias and time constant on detection efficiency

“…The neutron capture reaction in the BC/Si heterojunction detector for thermal neutrons is described in equation (1) and illustrated in figure 1. Neutron capture occurs only in the ptype BC side, with the neutron capture site serving as the origin for highly energetic 7 Li and 4 He ions, emitted back-to-back.…”

“…Few elements possess a significant capture cross section for thermal neutrons, and among these elements, those suitable for forming a semiconducting solid are rare indeed. Boron is uniquely suitable, having a large capture cross section for thermal neutrons, generating high energy ions that are easily detectable on neutron capture and forming a boron rich semiconducting solid, boron carbide (BC) [1,2], grown by plasma enhanced chemical vapor deposition (PECVD). The growth and properties of a semiconducting form of BC have been intensively studied for the last 20 years, resulting in heterojunction and homojunction diodes [1,[3][4][5][6][7], Esaki tunnel diodes [8], and, most relevant for this manuscript, solid state neutron detectors [2,9].…”

Surface photovoltage effects on the isomeric semiconductors of boron-carbide

“…When the source molecules closo 1,2-dicarbadodecaborane ͑orthocarborane͒ and closo 1,7-dicarbadodecaborane ͑metacarborane͒, shown inset to Figs. 1 and 2, are decomposed by synchrotron light ͑or electron beam induced decomposition͒, forming two of the many C 2 B 10 polytypes of boron-carbide, 14 respective shifts toward lower and higher binding energy are incurred.…”

Electrical transport in amorphous semiconducting AlMgB14 films

“…These materials may be useful in electronic devices operating in a wide variety of extreme or harsh environments (mechanically abrasive, radiative, corrosive, and/or high temperature). Implementation of these materials will require a thorough understanding of their electrical properties, which are profoundly influenced by their composition, 6,7 microstructure, 5 and deposition methods. 8 Considerable research has focused on the electrical transport mechanism, 6 dielectric properties, 7 doping behavior, 9,10 and device performance 3,5 of boron compounds with C, N, and O, such as B 4 C/B 5 C, B x N ͑x Ͼ 1͒ and boron suboxide ͑B x O,x Ͼ 1͒.…”

“…Implementation of these materials will require a thorough understanding of their electrical properties, which are profoundly influenced by their composition, 6,7 microstructure, 5 and deposition methods. 8 Considerable research has focused on the electrical transport mechanism, 6 dielectric properties, 7 doping behavior, 9,10 and device performance 3,5 of boron compounds with C, N, and O, such as B 4 C/B 5 C, B x N ͑x Ͼ 1͒ and boron suboxide ͑B x O,x Ͼ 1͒. Recently, the ternary boride compound AlMgB 14 has attracted attention due to its interesting mechanical properties; 11,12 however, no studies have been reported on the electrical properties of AlMgB 14 thin films.…”