Boron diffused emitter etch back and passivation

Li, Xiaoqiang; Tao, Longzhong; Xia, Zhengyue; Yang, Zhuojian; Dong, Jingbing; Song, Wentao; Zhang, Bin; Sidhu, R.; Xing, Guoqiang

doi:10.1109/pvsc.2012.6317789

Cited by 2 publications

(5 citation statements)

References 9 publications

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“…7 shows that 3-min etching-back can decrease emitter saturation current density (J oe ) obviously from 170 to 40 fA/cm 2 , which means the "dead layer" at the front surface would be removed and Auger recombination decreased. The trend of J oe with etching time is the same as reported by Li [9]. However, when the etch time increased to 4 min, J oe increased a little on the contrary.…”

Section: Optimization Of Front Surface Fieldsupporting

confidence: 84%

“…Generally, in order to avoid the TJS problem for IBC 2156-3381 © 2013 IEEE cells, an undoped gap is needed between rear n+ BSF and rear p+ emitter [9], but it would make the process much more complicated because it requires many steps of masking, opening, etching, and doping, with high-accuracy alignments. In order to mitigate the TJS problem, we simulate this issue by PC1D, which had been used for TJS study by Clugston and Basore [10].…”

Section: A Tunnel Junction Shuntingmentioning

confidence: 99%

“…In order to reduce the front surface recombination, an accurate etch-back process was introduced in our IBC processes reported by Li [9]. The N + /n/n + sandwich structure etched for different times was used to characterize the quality of FSF.…”

Section: Optimization Of Front Surface Fieldmentioning

confidence: 99%

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High-Efficiency Full Back Contacted Cells Using Industrial Processes

Dong¹,

Tao

Zhu³

et al. 2014

IEEE J. Photovoltaics

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Full-size (156 × 156 mm 2 ) interdigitated back contact (IBC) solar cells have been developed with conventional industry processes. With PC1D simulation and short-flow experiment verification, we found that the tunnel junction shunting of rear n + /p + could be mitigated significantly by controlling the boron surface concentration; therefore, it is not necessary to form a gap between rear emitter and back surface field. Made by a novel yet relative simple process, the IBC cells preliminarily achieved 19.65% best efficiency with J sc and V o c as high as 40.5 mA/cm 2 and 655 mV, respectively, while FF was only 73.9% due to the low pseudo fill factor (Pff) and high series resistance. Through the optimization of the rear pattern process, Pff was improved up to 82.5% and FF up to 77%. With further optimization of emitter, front surface field, passivation, and rear pattern design, the cells potentially can achieve up to 22.0% efficiency in the near future. Index Terms-Conventional process, high efficiency, interdigitated back contact (IBC) cells, tunnel junction shunting (TJS).

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Section: Optimization Of Front Surface Fieldsupporting

confidence: 84%

Section: A Tunnel Junction Shuntingmentioning

confidence: 99%

See 1 more Smart Citation

High-Efficiency Full Back Contacted Cells Using Industrial Processes

Dong¹,

Tao

Zhu³

et al. 2014

IEEE J. Photovoltaics

Self Cite

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“…After the removal of the BRL by chemical etching, the porous silicon is removed by using 1% NaOH solution for about 20s, so that the sheet resistance increases to about 60Ω/□.After that, AL 2 O 3 is used on both sides of the silicon wafers to passivate the substrate surface. [7,8,9]. The control group was prepared by LTO and HT-HNO 3 , and compared with chemical etching .…”

Section: Methodsmentioning

confidence: 99%

“…After boron diffusion, the sheet resistance and doping profiles were characterized by electrochemical capacitance voltage (ECV) and the boron concentrations near the surface of substrate shown in Fig.1 by the black line is higher than the solubility of boron in silicon [7]. It is considered that the BRL has been formed in this diffusion depth.…”

Section: B Atoms Concentration Analysismentioning

confidence: 99%

Effects and methods of the BRL removal in solar cell

Jiang¹,

Dai²,

Tao³

et al. 2017

Proceedings of the 3rd Workshop on Advanced Research and Technology in Industry (WARTIA 2017)

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Boron diffusion is a conventional process in N-type silicon solar cells fabrication. The boron-rich layer (BRL) usually formed on the surface of silicon wafer in boron diffusion process, and the effective carrier lifetime can be sharply reduced by the BRL. In this paper, three methods were used to remove the BRL: high temperature nitric acid (HT-HNO 3 ) oxidation, chemical etching treatment (CET) and low temperature thermal oxidation (LTO). ECV and TEM are employed to characterized the dopant profiles and morphology of the silicon substrate surface after removing the BRL with different methods. Furthermore, the effective carrier lifetime of the samples is obtained by sinton instrument, and the reflectivity of the samples is measured. By analysis of the result date, we can conclude that the CET method can effectively remove the BRL and cause less carrier lifetime degradation comparing with other methods. What's more, the CET method have the most less influence on the doping profiles while removing the BRL. However, the CET method will cause a greater increase of the surface reflectivity than other methods.

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Boron diffused emitter etch back and passivation

Cited by 2 publications

References 9 publications

High-Efficiency Full Back Contacted Cells Using Industrial Processes

High-Efficiency Full Back Contacted Cells Using Industrial Processes

Effects and methods of the BRL removal in solar cell

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