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The giant room-temperature magnetocapacitance is reported in the Co2+ substitutionally doped SnO2 film in which the ferromagnetism coexists with the dielectric state. The maximum magnetocapacitance is observed in the Sn0.98Co0.02O2 film in which the magnetocapacitance is as large as 0.45 at frequency of 1.0 kHz and saturated magnetic field of ∼6.0 kOe. We experimentally demonstrate that such magnetocapacitance effect correlates with the Co dopant concentration and the existence of oxygen vacancy. The electric polarization response of the oxygen vacancy–Co ion complexes to the magnetic field is attributed to the origin of the magnetocapacitance.

In this study, a well-controlled etch-back technique was developed using HF and HN03 mixture solution to remove the boron depletion layer caused by post-oxidation step. The etching rate can be manipulated by changing HF proportion; meanwhile the sheet resistance variation can be maintained smaller than 10% after etching back. Nitric acid oxidation of Si technique was used to passivate the boron emitter before and after etch back. The presence of the surface boron depletion layer makes the surface boron concentration lower, which is better for low Dit at the surface after passivation , while it can also introduce extra recombination by making the electron and hole concentration closer at the surface. PCID was used to simulate the results for further understanding the recombination in the whole emitter region.Index Termsetch back , boron diffused emitter, passivation , silicon.

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