Boron diffusion in strained and strain-relaxed SiGe

Wang, C.C.; Sheu, Yae‐Lin; Liu, Sally; Duffy, Ray; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

doi:10.1016/j.mseb.2005.08.127

Cited by 15 publications

(7 citation statements)

References 4 publications

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“…18 This becomes noticeable in the unexpected behavior of the drive current degradation for closer SiGe proximities of devices with identical implantation conditions ͑implant-matched͒, al- though the channel strain increases as expected. 18 This becomes noticeable in the unexpected behavior of the drive current degradation for closer SiGe proximities of devices with identical implantation conditions ͑implant-matched͒, al- though the channel strain increases as expected.…”

Section: A Embedded Silicon-germaniummentioning

confidence: 60%

Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

Flachowsky

Illgen

Herrmann

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Strained silicon techniques have become an indispensable technology feature, enabling the momentum of semiconductor scaling. Embedded silicon-germanium (eSiGe) is already widely adopted in the industry and delivers outstanding p-metal oxide semiconductor field effect transistor (MOSFET) performance improvements. The counterpart for n-MOSFET is embedded silicon-carbon (eSi:C). However, n-MOSFET performance improvement is much more difficult to achieve with eSi:C due to the challenging process integration. In this study, detailed TCAD simulations are employed to compare the efficiency of eSiGe and eSi:C stressors and to estimate their potential for performance enhancements in future nanoscaled devices with gate lengths down to 20 nm. It is found that eSiGe as a stressor is superior to eSi:C in deeply scaled and highly strained devices due to its easier process integration, reduced parasitic resistance, and nonlinear effects in the silicon band structure, favoring hole mobility enhancement at high strain levels

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Section: A Embedded Silicon-germaniummentioning

confidence: 60%

Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

Flachowsky

Illgen

Herrmann

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…The concentrations of Si I was included in the simulation by controlling the accepted frequency of BI formation and listed in Equation (12), which the pre-exponential factor C I was tuned to decide the concentration of Si I . The results show that the enhancement of boron diffusion ratio is large when increasing the concentration of Si I .…”

Section: Boron Diffusion In Si Phasementioning

confidence: 99%

“…In order to reduce boron TED, lots of methods have been proposed, such as rapid thermal annealing (RTA) and impurity doping (introducing N or P into Si substrate) [5]- [7]. Hitherto, it has been proposed that boron diffusion could be retarded in compressive strained Si 1-x Ge x alloys [8]- [12]. Boron diffusivity in strained as well as relaxed Si 1-x Ge x alloys largely decreased at Ge content up to 40% but increased again at high Ge levels were also reported [13]- [15].…”

Section: Introductionmentioning

confidence: 99%

The Lattice Kinetic Monte Carlo Simulation of Boron Diffusion in SiGe

Huang¹,

Ke²,

Lee

2014

ACES

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The lattice kinetic Monte Carlo simulation (kMCS) was applied to study the boron diffusion in Si-SiGe beyond nanotechnology. Both the interstitialcy and kick-out mechanisms of boron diffusion were considered, including the effects of annealing temperatures, boron dopant concentrations, Ge compositions, and concentrations of Si self-interstitial defects (SiI). The effects on boron diffusion caused by single and double layer(s) of SiGe phase with different Ge contents and varying boron concentrations in double layers of SiGe phase were also simulated. The results show that boron diffusion in Si and between SiGe-Si both largely increase as the temperature or concentration of SiI increases, but the boron diffusion between SiGe-Si is much less than in Si. Increasing the Ge contents in SiGe alloy could retard boron diffusion heavily, while increasing the boron concentration on SiGe phase would enhance boron diffusion.

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“…When annealing at a furnace temperatures of 750 1C, boron diffusion decreases with increasing Ge content [9] presenting preferential Ge-B bonding as reasoning for retardation of B diffusion in SiGe [9][10][11]. Point defect injection from annealing ambient experiments in Si-rich SiGe suggests that B diffusion remains interstitially mediated [12,13] with fractional interstitialcy constants comparable to that of pure Si [14].…”

Section: Introductionmentioning

confidence: 99%