Boron diffusion into 6H-SiC through graphite mask

Soloviev, Stanislav I.; Gao, Ying; Wang, X.; Sudarshan, Tangali S.

doi:10.1007/s11664-001-0020-4

Cited by 16 publications

(10 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9 Diffusion was performed at a temperature of 1800-2000°C in an argon ambient using a graphite mask with open windows from 200 to 1000 m in diameter. 10 Standard photolithography process was employed to fabricate the planar p-n diodes structures without edge termination. Ohmic contacts with a thickness of 150 nm to the p region were fabricated by e-beam deposition of Ti/ Al metal composition followed by rapid thermal process (RTP) annealing at 1000°C for 5 min in nitrogen.…”

Section: Methodsmentioning

confidence: 99%

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

Maximenko

Soloviev

Cherednichenko

et al. 2004

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

The electron-beam induced current (EBIC) method was employed to investigate the electrical activity of dislocations in silicon-carbide-diffused p-n diodes. It was observed that EBIC contrast depends on the type of defect (superscrew, screw, and edge dislocation). This dependence was attributed to spatial inhomogeneities in the electrical properties of the material around the dislocations due to different impurity-dislocation interactions during high-temperature (∼1900°C) diffusion. Chemical etching of the sample was used to define the nature of the defects observed by EBIC imaging. It was found that electrical breakdown of the diodes occurs at the location of superscrew dislocations.

show abstract

Section: Methodsmentioning

confidence: 99%

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

Maximenko

Soloviev

Cherednichenko

et al. 2004

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…The B-Al diffusion was accomplished via a graphite mask at 2,000°C for 10 min at 650 torr pressure of argon as a carrier gas. 5,6 Then, electron-beam vapor deposition of Al/Ni contacts was made at 100°C, following a rapid thermal annealing at 800°C for 10 sec in nitrogen. For the samples with annealed-metal contacts, the contacts were created by magnetron sputtering of Ni at 200°C through shadow mask followed by rapid thermal annealing at 800°C for 10 sec in nitrogen.…”

Section: Methodsmentioning

confidence: 99%

High resistivity measurement of SiC wafers using different techniques

Muzykov

Khlebnikov

Regula

et al. 2003

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.

show abstract

“…Capture processes and thermal activation of electrons associated with these levels can greatly influence duration of current relaxation of SiC p-n junction. Currently, power diodes based on silicon carbide made by diffusion technology have maximal breakdown voltage ∼700 V for 4H polytype and ∼1000 V for the 6H polytype of silicon carbide [12,13].…”

Section: Introductionmentioning

confidence: 99%

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

Atabaev

Juraev

2018

Advances in Materials Science and Engineering

View full text Add to dashboard Cite

Novel method of boron diffusion at low temperatures between 1150 and 1300°C is used for the formation of both p-i SiC junction and i-region in one technological process. As the junction formation conditions in this method are essentially different from those in the conventional diffusion (low temperatures and process of diffusion are accompanied by formation of structure defects), it is of special interest to identify advantages and disadvantages of a new method of diffusion. Developed SiC p-i-n junction diodes have fast switching time, and the duration of the reverse recovery current is less than 10 ns with a breakdown voltage of 120-140 V. Fabricated diodes possess capability to operate at temperatures up to 300°C. As the temperature of diffusion process is lower than the melting temperature of silicon, this new technology allows fabrication of diodes on the base of SiC/Si epitaxial structures.

show abstract

Boron diffusion into 6H-SiC through graphite mask

Cited by 16 publications

References 4 publications

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

High resistivity measurement of SiC wafers using different techniques

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

Contact Info

Product

Resources

About