High resistivity measurement of SiC wafers using different techniques

Muzykov, Peter G.; Khlebnikov, Yuri I.; Regula, S. V.; Gao, Yu; Sudarshan, Tangali S.

doi:10.1007/s11664-003-0134-y

Cited by 19 publications

(7 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Note that similar effect was observed during our previous study of other SI SiC samples [23]. Slow drifting of device readings during low to high temperature measurements was present, which disabled Hall effect measurements during the temperature increase.…”

supporting

confidence: 84%

Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications

Mandal

Muzykov

Krishna

et al. 2011

2011 IEEE Nuclear Science Symposium Conference Record

View full text Add to dashboard Cite

Nuclear radiation detectors in the energy range of soft x-rays have been fabricated using bulk semi-insulating (SI) 4H-SiC crystals and SI and n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) on highly doped (0001) 4H SiC substrates. The devices have been characterized by optical microscopy, current-voltage (I-V) measurements, thermally stimulated current (TSC) spectroscopy (94K -650 K), Hall effect, van der Pauw measurements, and electron beam induced current (EBIC) technique. Both epitaxial layers exhibited relatively shallow levels related to AI, B, L-and D-centers. Deep level centers in the n-type epitaxial layer peaked at -400 K (Ea -1.1 eV) and -470 K were correlated with IL2 defect and 1.1 eV center in high purity bulk SI 4H-SiC. The SI epitaxial layer exhibited peak at -290 K (Ea = 0.82 -0.87 eV) that was attributed to ILl and HK2 centers, and at -525 K that was related to intrinsic defects and their complexes with energy levels close to the middle of the band gap. Results of EBIC and optical microscopy characterization showed segregation of threading dislocations around comet tail defects in the n-type epitaxial layers. The I-V characteristics of the devices on SI epitaxial layers obtained in wide temperature range (94K -650 K) exhibited steps at -1 V and -70 V corresponding to the ultimate trap filling of deep centers peaked at > 500 K and at -250 K (Ea -0.57 eV), & -300 K (Ea -0.85 eV) respectively. The high temperature resistivity measurements of bulk SI 4H-SiC sample revealed resistivity hysteresis that was attributed to the filling of the deep level electron trap centers. The responsivity of the n type epitaxial SiC sensors to low energy x-rays is reported for the first time.

show abstract

supporting

confidence: 84%

Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications

Mandal

Muzykov

Krishna

et al. 2011

2011 IEEE Nuclear Science Symposium Conference Record

View full text Add to dashboard Cite

show abstract

“…Contactless resistivity measurements show significant variations, particularly towards the edges of SI wafers, possibly due to the presence of vanadium-rich precipitates . Alternative resistivity measurements using removable graphite contacts have also be used as a rapid method of assessing SI SiC wafer quality (Muzykov et al 2003).…”

Section: Sic Materials Propertiesmentioning

confidence: 99%

New materials for radiation hard semiconductor dectectors

Sellin

Vaitkus

2006

Nuclear Instruments and Methods in Physics Research Section A:

176

View full text Add to dashboard Cite

We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments. This work is carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility (SLHC). Tracking detectors operating at the SLHC in this environment will have to be capable of withstanding radiation levels arising from a luminosity of 10 35 cm -2 s -1 which will present severe challenges to current tracking detector technologies. The "new materials" activity within RD50 is investigating the performance of various semiconductor materials that potentially offer radiation hard alternatives to silicon devices. The main contenders in this study are silicon carbide, gallium nitride and amorphous silicon. In this paper we review the current status of these materials, in terms of material quality, commercial availability, charge transport properties, and radiation hardness studies. Whilst these materials currently show considerable promise for use as radiation hard tracking detectors, their ultimate success will depend on the continued improvement of the availability of high quality material.

show abstract

“…The measured resistivity by a two‐point probe is presented in Table 2 for the sake of comparison, showing the same trend as the measured sheet resistance of the samples. The resistivity of the SiC bulk and thin films depends on the crystal structure, composition, processing method, and measurement technique used 66–70 . There are, however, few reports on the sheet resistance of SiC coating; to the best of our knowledge, there is no report on the sheet resistance of the a‐SiC coating on an alumina substrate.…”

Section: Resultsmentioning

confidence: 99%

“…The resistivity of the SiC bulk and thin films depends on the crystal structure, composition, processing method, and measurement technique used. [66][67][68][69][70] There are, however, few reports on the sheet resistance of SiC coating; to the best of our knowledge, there is no report on the sheet resistance of the a-SiC coating on an alumina substrate. The electrical resistivity of the liquid phase sintered SiC is mainly dependent on the amount and composition of the sintering aids, varying from ∼ 10 − 4 Ωm to10 9 Ωm .…”

Section: Raw Materialsmentioning

confidence: 99%

The effects of adding nano‐alumina filler on the properties of polymer‐derived SiC coating

Yousefi

Ghatee

Rezakazemi

et al. 2021

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

In this paper, SiC coating was prepared using the polymer‐derived ceramic method; then the effect of nano‐alumina as a filler material was studied. First of all, polycarbosilane(PCS) was dissolved in xylene; after that, different amounts of nano‐alumina particles were added to the solution. The coating was deposited on the alumina substrate using the dip‐coating method; this was followed by sintering at 1200℃. The phase content and microstructure of the samples were studied by X‐ray diffraction and scanning electron microscope methods, respectively. Nanohardness, Young's modulus, and coating adhesion were investigated by a nanoindentation method. The sheet resistance was evaluated using the four‐point probe technique; also, the wear resistance of the coating was studied by applying the pin‐on‐disk method. It was found that the addition of the nano‐alumina filler up to 20 wt% drastically improved the adhesion and wear resistance of the SiC coating.

show abstract

High resistivity measurement of SiC wafers using different techniques

Cited by 19 publications

References 5 publications

Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications

Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications

New materials for radiation hard semiconductor dectectors

The effects of adding nano‐alumina filler on the properties of polymer‐derived SiC coating

Contact Info

Product

Resources

About