Boron doping of ultrananocrystalline diamond films by thermal diffusion process

Tirado, Pablo; Alcantar-Peña, Jesús J.; Obaldía, Elida de; Kudriavtsev, Yuriy; Garcı́a, R.; Auciello, Orlando

doi:10.1557/mrc.2018.157

Cited by 11 publications

(10 citation statements)

References 21 publications

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“…The changes observed in the Raman spectra shown in Figure 1.14b are correlated mainly with changes in the grain boundary structure and chemistry of the UNCD films, mostly due to loss of TPA molecules and enhancement of sp 2 -C atom bonds induced by the B atoms' diffusion during annealing at temperatures !900 C [38,91]. The changes observed in the Raman spectra correlate with desorption of H atoms from grain boundaries and surfaces, as seen also for many polycrystalline and crystalline diamond films annealed at temperatures >800 C [38,92].…”

Section: Doping Of Uncd Films With Boron (B) Atoms To Produce B-uncd ...supporting

confidence: 56%

“…Alternatively, recent R&D work demonstrated a new process for B-doping of UNCD films, performed in a dedicated RTA system after growing UNCD films ($630 nm thick) on SiO 2 ($300 nm thick)/Si substrates using the MPCVD process in a dedicated system, as described above [38]. Subsequently, the UNCD films were coated with a spin-on-dopant (SOD) B-containing film (~200 nm thick), dispersed on the UNCD films' surface via a spinning speed of 3000 rpm.…”

Section: Doping Of Uncd Films With Boron (B) Atoms To Produce B-uncd ...mentioning

confidence: 99%

“…The problem with all MPCVD and HFCVD growth processes used to produce B-UNCD or B-SCD, B-MCD, B-NCD films is that the B-containing molecular precursors flown into the vacuum systems during diamond film growth result in contamination of expensive systems used for growing any type of diamond films, thus limiting those systems to growing only B-doped diamond films. In relation to this issue, Auciello's group recently developed a post-grow diamond film doping with B atoms using an independent, relatively low-cost/ dedicated rapid thermal annealing system, which produces B-UNCD films or any other B-diamond doped films with similar quality and high electrical conductivity as the B-doped diamond films produced by MPCVD and HFCVD growth processes, by simply inserting the diamond film with a spin-on-dopant (SOD) solution (Boroflim 100®) dispersed on the UNCD surface via a spinning speed of 3000 rpm and a process time of 20 s, and subjecting the surface-doped UNCD film to a rapid thermal annealing (RTA) process for ~10 s, which diffuses the B atoms into the UNCD film lattice to produce B-doped B-UNCD films [38]. 3.…”

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confidence: 99%

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A comprehensive guide to the science of a transformational ultrananocrystalline-diamond (UNCDTM) thin film technology enabling a new generation of high-tech and external and implantable medical devices. Edited and co-authored by a co-originator and pioneer in the field, it describes the synthesis and material properties of UNCDTM coatings and multifunctional oxide/nitride thin films and nanoparticles, and how these technologies can be integrated into the development of implantable and external medical devices and treatments of human biological conditions. Bringing together contributions from experts around the world, it covers a range of clinical applications, including ocular implants, glaucoma treatment devices, implantable prostheses, scaffolds for stem cell growth and differentiation, Li-ion batteries for defibrillators and pacemakers, and drug delivery and sensor devices. Technology transfer and regulatory issues are also covered. This is essential reading for researchers, engineers and practitioners in the field of high-tech and medical device technologies across materials science and biomedical engineering.

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Section: Doping Of Uncd Films With Boron (B) Atoms To Produce B-uncd ...supporting

confidence: 56%

Section: Doping Of Uncd Films With Boron (B) Atoms To Produce B-uncd ...mentioning

confidence: 99%

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confidence: 99%

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“…It was also unclear whether this boron doping was substitutional, and how large the stress was, caused by this thermal diffusion process. To avoid the possible B contamination of the chamber, post-growth thermal diffusion has been demonstrated for the B-doping of UNCD films [31]. A commercial boron-containing spin-on-dopant (SOD) solution is spin-coated to form a 200-nm-thick film on the UNCD surface.…”

Section: Uncd Doping Techniquesmentioning

confidence: 99%

Ultrananocrystalline Diamond Nanowires: Fabrication, Characterization, and Sensor Applications

et al. 2021

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The aim of this review is to provide a survey of the recent advances and the main remaining challenges related to the ultrananocrystalline diamond (UNCD) nanowires and other nanostructures which exhibit excellent capability as the core components for many diverse novel sensing devices, due to the unique material properties and geometry advantages. The boron or nitrogen doping introduced in the gas phase during deposition promotes p-type or n-type conductivity. With the establishment of the UNCD nanofabrication techniques, more and more nanostructure-based devices are being explored in measuring basic physical and chemical parameters via classic and quantum methods, as exemplified by gas sensors, ultraviolet photodetectors, piezoresistance effect-based devices, biological applications and biosensors, and nitrogen-vacancy color center-based magnetic field quantum sensors. Highlighted finally are some of the remaining challenges and the future outlook in this area.

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“…To avoid the possible B contamination of the chamber, post-growth thermal diffusion has been demonstrated for the B-doping of UNCD films [33]. A commercial boron-containing spin-on-dopant (SOD) solution is spin-coated to form a 200 nm thick film on UNCD surface.…”

Section: Synthesis Of Uncd Filmsmentioning

confidence: 99%

Ultrananocrystalline Diamond Nanowires: Fabrication, Characterization, and Sensor Applications

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The aim of this review is to provide a survey of the recent advances and the main remaining challenges related to the ultrananocrystalline diamond (UNCD) nanowires and other nanostructures which exhibit excellent capability as the core components for many diverse novel sensing devices, due to the unique material properties and geometry advantages. The doping introduced in the gas phase during deposition promotes p-type or n-type conductivity. With the establishment of the UNCD nanofabrication techniques, more and more nanostructure based devices are being explored in measuring basic physical and chemical parameters via classic and quantum methods, as exemplified by gas sensors, ultraviolet photodetectors, piezoresistance effect based devices, biological applications, and nitrogen-vacancy color center based magnetic field quantum sensors. Highlighted finally are some of the remaining challenges and future outlook in this area.

show abstract

Boron doping of ultrananocrystalline diamond films by thermal diffusion process

Abstract: Abstract

Cited by 11 publications

References 21 publications

Ultrananocrystalline Diamond Coatings for Next-Generation High-Tech and Medical Devices

Ultrananocrystalline Diamond Coatings for Next-Generation High-Tech and Medical Devices

Ultrananocrystalline Diamond Nanowires: Fabrication, Characterization, and Sensor Applications

Ultrananocrystalline Diamond Nanowires: Fabrication, Characterization, and Sensor Applications

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