Abstract:Boron junction and its passivation is an active topic in photovoltaic research due to its importance to passivated emitter and rear totally-diffused (PERT) bifacial Si solar cell. In this paper, a systematic study on boron-implanted junction, its passivation and ohmic contact formation, as well as application to p-PERT bifacial cells has been presented. More specifically, the impact of junction profile and surface passivation on boron junction quality, which can be influenced by implantation and in situ oxidat… Show more
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