Boron nitride: A new photonic material

Abstract

Rhombohedral Boron Nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. Xray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp 2 -BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

“…The potential energy surface for the first elimination reaction (3) exhibits one TS, which lies only 0.4 kJ mol À1 above the products. The reaction barrier for reactions (4) and (5) is thus equal to the electronic energy difference DE between reactants and products. 7(a) underlines this with very long B-C (2.53 Å) and B-H (2.47 Å) bond distances and a C-C bond distance in C 2 H 4 units, which is already matching the bond length in the product (1.34 Å).…”

“…1 Although it is nominally called B 4 C, the carbon concentration of the compound can vary from 9 to 20 at% and exist as a stable single phase in a large homogeneous region from B 4 C to B 10.4 C. 2,3 Boron nitride (BN) is isoelectronic to carbon and can form compounds with either sp 3 -hybridized or sp 2 -hybridized bonds. 4 Moreover, employing Mg as a p-type dopant for sp 2 -BN shows a lower activation energy of the Mg acceptor of B31 meV, this makes it more attractive for deep UV application than AlN. The interest for c-BN mainly stems from the phase similarities to diamond: c-BN is regarded as the hardest material after diamond and developed as hard coatings for cutting tools.…”

“…The most studied sp 3 -hybridized phase is the cubic (c-BN), which is isoelectronic to diamond, but there is also a wurtzite phase (w-BN), which is isostructural to Lonsdaleite (hexagonal diamond). 4 Except all the applications mentioned above, there is one emerging application for boron-based materials, both B 4 C 6 and BN 7 are promising neutron converting layers in new generation neutron detectors. The sp 2 -hybridized BN can crystallize into two different phases: hexagonal (h-BN) and rhombohedral (r-BN) are envisioned as promising materials for photonics and electronics.…”

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3

“…[31] The growth conditions include a wide varieties of boron precursors of borazine (B 3 N 3 H 6 ), [8] boron halides (BF 3 , BCl 3 , BBr 3 ), [9,25] triethylboron ((C 2 H 5 ) 3 B, TEB), [5][6][7][10][11][12][13][14][15][16][17][18][19][20][21] trimethylboron ((CH 3 ) 3 B, TMB), [22] and diborane (B 2 H 6 ). [23,24] Also, various substrates for BN growth were investigated, such as sapphire, [5][6][7][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] SiC, [22] Ni, [21,24] and Cu. [8] High-purity BN films would be expected using B 2 H 6 gas because it does not contain Cl, Br, or C atoms in the raw material.…”

Atomistic modeling of graphene/hexagonal boron nitride polymer nanocomposites: a review

“…h-BN nanofillers are synthesized in various categories such as 1D nanotubes (BNNT) (Figure 1(c)), 54,55,[58][59][60][61][62] 2D nanosheets (BNNS), 63 0D fulborenes, 64 nanowires, 58 nanoribbons (BNNR), 65,66 nanoflakes, 67 nanocones, 68 and nanoscrolls. 69 It is the electrical insulating Young's modulus (TPa) 1 2 1.18 54 0.8 50 Fracture stress (GPa) 130 2 133 50 165 50 Thermal conductivity (W/m/K)~5000 2 1700-2000 50 Band gap (eV) 0 1 5-6; chirality independent 4 Raman active modes G band: 1580/cm, 2D band: 2700/cm 7 A1 tangential mode: 1370/cm, RBM model: 153/cm 55 Characteristic peak: 1369/cm 51 Work Function (eV) 4.49 56 5.30 57 3.65 56 property, which differentiates h-BN nanofillers from various other nanofillers making it suitable for applications in the field of thermal packaging. Due to exceptional properties of h-BN nanofillers, they have found applications in the field of electronic packaging, [70][71][72] electrode additive material, 56 UV light emitter in optoelectronics, 19,73 micro and nano devices, 73 charge barrier layer for electronic equipment, 74 therapeutic agent (to treat the neurogenetic disorders), cancer treatment (e.g.…”