Boron Nitride and Silicon Boron Nitride Film and Polish Characterization

Neureither, B.; Basa, C.; Sandwick, T.; Blumenstock, Kenneth A.

doi:10.1149/1.2221134

Cited by 14 publications

(5 citation statements)

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“…434,436 For this reason, B 2 O 3 is likely unsuitable for low-k interconnect applications. Boron nitride (BN) does not exhibit the same extreme hygroscopic behavior as B 2 O 3 and has been investigated for numerous electronic applications as a gate dielectric, 437 ILD, 434 ES, 438 DB, 439 HM, 440 polish stop, 441 and UV photo-detector / light emitting diode. 442,443 PECVD a-BN:H films have been reported to have reasonably low k values of 4.0-5.7 and high mass densities of 1.7-1.9 g/cm 3 that make it of interest for potential low-k DB interconnect applications.…”

Section: Future Trends and Research Needed For Low-k Db And Es Materialsmentioning

confidence: 99%

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Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: Future Trends and Research Needed For Low-k Db And Es Materialsmentioning

confidence: 99%

mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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“…Amorphous boron nitride differs from r-, h-and t-BN by being intrinsically isotropic. a-BN thin films are often reported to be hydrogenated [94][95][96][97][98][99][100] and have tuneable stoichiometry 96,[101][102][103][104] . The band gap of a-BN can be as high as 5.7 to 5.9 eV 96,102 , but lower values such as 3.8 eV 94 or 5.04 eV 99 were also reported.…”

Section: Properties Of Sp 2 -Hybridised Boron Nitridementioning

confidence: 99%

“…94,96,97,99,101,106 The main issue with a-BN is the chemical stability. a-BN films with high content of N -H bonds or halogen impurities are highly hygroscopic [94][95][96][97] while they become inert otherwise [94][95][96] . The hydrogen content can be reduced by addition of hydrogen in the gas phase 99 or annealing 107 .…”

Section: Properties Of Sp 2 -Hybridised Boron Nitridementioning

confidence: 99%

“…a-BN also has high thermal stability: annealing of a-BN up to 700 °C does not induce crystallisation nor oxidation and reduces the stress in the films (dehydrogenation). 95,97,107 While the data on h-BN are usually consistent, there is a broad dispersion on the data measured on t-BN and a-BN and an evident knowledge gap on r-BN properties. Nevertheless, all forms of sp 2 -BN are of technological importance.…”

Section: Properties Of Sp 2 -Hybridised Boron Nitridementioning

confidence: 99%

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Chemical vapour deposition of sp2-hybridised B-C-N materials from organoborons

Souqui

2019

Linköping Studies in Science and Technology. Dissertations

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Up left: top view scanning electron micrograph (SEM) of sp 2 -BN grains and 3C-SiC grains on Si(111). Up right: top view SEM of r-BN grains on ZrB2, surrounded by a-BN. Bottom left: top view SEM of the surface of a 1.5 µm thick r-BN film deposited from TMB covered with a-BN. Bottom right: top view SEM of rhombohedral boron carbide grains on silicon carbide. Back side:Up: cross section SEM of DRAM structures of aspect ratio 60:1 (low magnification) and a-BxC film deep in the trenches (high magnification).Bottom, from left to right: top view SEM of sp 2 -BCxNy nanowalls deposited from plasma CVD, with increasing degree of disorder and complexity.During the course of research underlying this thesis, Laurent Souqui was enrolled in Agora Materiae, a multidisciplinary doctoral program at Linköping University, Sweden.

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