Boron nitride nanotubes: Pronounced resistance to oxidation

Abstract

Boron nitride (BN) nanotubes have the same nanostructure as carbon nanotubes but are found to exhibit significant resistance to oxidation at high temperatures. Our systematic study has revealed that BN nanotubes are stable at 700 °C in air and that some thin nanotubes (diameter less than 20 nm) with perfect multiwalled cylindrical structure can survive up to 900 °C. Thermogravimetric analysis reveals an onset temperature for oxidation of BN nanotubes of 800 °C compared with only 400 °C for carbon nanotubes under the same conditions. This more pronounced resistance of BN nanotubes to oxidation is inherited from the hexagonal BN and also depends on the nanocrystalline structure. This high level of resistance to oxidation allows promising BN nanotube applications at high temperatures.

Charge-Controlled Switchable CO2 Capture on Boron Nitride Nanomaterials

“…[10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] They have excellent mechanical properties, high thermal conductivity, and high resistance to oxidation. [10][11][12][13][14][15] These properties make them very promising in a variety of potential applications such as optoelectronic nanodevices, spintronics, light emission, photocatalysts, thermal rectifiers, functional composites, etc.…”

“…[10][11][12][13][14][15] These properties make them very promising in a variety of potential applications such as optoelectronic nanodevices, spintronics, light emission, photocatalysts, thermal rectifiers, functional composites, etc. [16][17][18][19][20][21] One potential application is for CO 2 capture and storage. 26 However, the interactions between neutral BN nanosheets, BNNTs and CO 2 are very weak due to the vacant p-like orbitals of the boron atoms in these materials.…”

Synthesis of large single-crystal hexagonal boron nitride grains on Cu–Ni alloy

“…1). Owing to the strong covalent sp 2 bonds in the plane, it has very high mechanical strength, thermal conductivity and chemical stability [2][3][4][5][6] . The h-BN layer with atomically smooth surface free of dangling bonds/charge traps makes it an ideal dielectric substrate for field effect transistor 7 and spacer for novel tunnelling devices 8,9 .…”

Transport properties and induced voltage in the structure of water-filled single-walled boron-nitrogen nanotubes

“…But there is no theoretical or experimental work available about the structure of water-filled single-walled boron-nitrogen nanotubes ͑SWBNNTs͒. Because of the excellent physical and chemical properties, the regular atomic structures of a SWBNNT, [12][13][14][15] as well as a stronger interaction with the single-file water chain in a SWBNNT, we believe that the structure of water-filled SWBNNTs might also be developed as nanovoltage generators or energy harvesting devices. In this work we give insights into ͑1͒ the transport properties of water in the tube from the aspects of configuration, the diffusion coefficient, the dipole orientation, and the density distribution, and ͑2͒ the mechanism of voltage generation using the mutual iterative methods of DFT and MD.…”