Boron reactivation kinetics in hydrogenated silicon after annealing in the dark or under illumination

Zundel, T.; Weber, J.

doi:10.1103/physrevb.43.4361

Cited by 74 publications

(49 citation statements)

References 47 publications

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“…Splitting of B H pairs has an activation energy of 1.1 70.1 eV under carrier injection [23]. This fits well with the activation energy of the regeneration process that was determined to be 0.98 70.06 eV (Section 5).…”

Section: Hydrogen Related Regeneration Modelsupporting

confidence: 81%

“…Consequently, regenera tion is strongly impeded after tempering steps at around 400 •c (15 min). In contrast, B H pairs behave very differently: It has been shown [22,23) that hydrogen detachment from boron atoms is enhanced by carrier injection possibly due to some hydrogen changing its charge state from H + to ~ after detachment. This might prevent it from instantaneously rebinding to the boron atom again, thus increasing the escape probability and reducing the dissociation energy from 1.76 ± 0.05 eV in the dark to 1.1 ± 0.1 eV under carrier injection [23 1. This makes B H pairs a probable candidate for a bonding state from which hydrogen can be released easily under typical regeneration conditions as low as T -100 •c and carrier injection.…”

Section: Influence Of Mid-temperature Steps On Regenerationmentioning

confidence: 99%

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Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Wilking

Beckh

Ebert

et al. 2014

Solar Energy Materials and Solar Cells

118

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a b s t r a c tRecombination active boron oxygen related defects typically limit the efficiency of solar cells made from boron doped, oxygen rich silicon. This limitation can be overcome by applying a regeneration process that requires slightly elevated temperatures, carrier injection, and the presence of hydrogen in the silicon substrate in order to regenerate quickly and completely.The influence of mid temperature steps up to 400 1C on the regeneration kinetics is investigated and the results can be explained with the efficacy of the regeneration process depending on the hydrogen bonding states prior to regeneration. Boron hydrogen pairs are found to be good candidates to be the relevant hydrogen source during regeneration. The long term stability of the regenerated state is tested under solar cell operating conditions, and the thermal activation energy of its destabilization is determined to be 1.25 70.05 eV.Limiting factors for high speed regeneration processes are discussed, and a high temperature/high illumination procedure is presented, allowing complete regeneration in less than 10 s. This makes regeneration feasible as an in line process in solar cell production.

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Section: Hydrogen Related Regeneration Modelsupporting

confidence: 81%

Section: Influence Of Mid-temperature Steps On Regenerationmentioning

confidence: 99%

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Wilking

Beckh

Ebert

et al. 2014

Solar Energy Materials and Solar Cells

118

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“…This technique has been applied recently by several groups to study dissociation kinetics of a variety of dopant-H complexes [62][63][64]. The clever application of junction fields has also been fruitfully applied to study other -related reactions and H-diffusion [65].…”

Section: Dissociation Of Dopant-h Complexesmentioning

confidence: 99%

Hydrogen Passivation in Semiconductors

Stavola

1992

Acta Phys. Pol. A

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“…This characterization technique has been demonstrated to be very sensitive to introduced hydrogen at temperatures below 473 K [12]. It becomes less effective at higher temperatures due to increased dissociation of the hydrogen-boron pairs [13].…”

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confidence: 99%

A novel source of atomic hydrogen for passivation of defects in silicon

Hamer

Bourret‐Sicotte

Martins

et al. 2017

Physica Rapid Research Ltrs

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Palladium membranes have been used for decades for the separation of hydrogen from other gasses. In this letter the use of thin palladium leaves to act as sources of atomic hydrogen for silicon samples is explored. It has been assumed in the past that although hydrogen diffuses through palladium in atomic form, the atoms recombine to form molecular hydrogen at the surface. In this letter it is shown that hydrogen supplied to one surface of a palladium leaf can result in atomic hydrogen being released from the opposite surface at low pressure. This is demonstrated through the use of a palladium leaf in a direct plasma system which allows for atomic hydrogen to be supplied to a sample while avoiding exposure to UV radiation from the plasma and high energy charged particles. This method is shown to provide significant atomic hydrogen to silicon samples and improve passivation of silicon surfaces. Method of Shielded Hydrogen Passivation: Schematic of direct plasma chamber with a shield inserted between the plasma and the silicon sample.

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Boron reactivation kinetics in hydrogenated silicon after annealing in the dark or under illumination

Cited by 74 publications

References 47 publications

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Hydrogen Passivation in Semiconductors

A novel source of atomic hydrogen for passivation of defects in silicon

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