Boron segregation control in silicon crystal ingots grown in Czochralski process

Sim, Bok-Cheol; Kim, Kwang-Hun; Lee, Hong-Woo

doi:10.1016/j.jcrysgro.2006.02.003

Cited by 22 publications

(12 citation statements)

References 20 publications

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“…The square of the correlation coefficient (R 2 ) is 0.999 close to unity, which shows a good linear fit to the data. In the nearly complete stirring convection without magnetic field, k e ¼ 0.72870.006 for boron is in good agreement with other works [4,16], where k e =0.7 and 0.73870.006 are reported.…”

Section: Resultssupporting

confidence: 92%

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Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Hong

Sim²,

Shim

2008

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 92%

“…The effects of growing parameters on dopant concentrations in the crystals are experimentally investigated by Sim et al [4]. With the very low crystal rotation (w) p3 rpm, k e is almost unity.…”

Section: Introductionmentioning

confidence: 99%

Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Hong

Sim²,

Shim

2008

Journal of Crystal Growth

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“…Figure 3 shows the new assessed phase equilibria in the Si-rich Si-B system. The equilibrium distribution coefficient calculated from the present assessment is 0.757, which is close to the recent experimental value, 29) 0.751.…”

Section: The Si-b Systemsupporting

confidence: 88%

A Thermochemical Database for the Solar Cell Silicon Materials

et al. 2009

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The fabrication of solar cell grade silicon (SOG-Si) feedstock involves processes that require direct contact between solid and liquid phases at near equilibrium conditions. Knowledge of the phase diagram and thermochemical properties of the Si-based system is therefore important for providing boundary conditions in the analysis of processes. A self-consistent thermodynamic description of the Si-Ag-Al-As-Au-B-Bi-C-CaCo-Cr-Cu-Fe-Ga-Ge-In-Li-Mg-Mn-Mo-N-Na-Ni-O-P-Pb-S-Sb-Sn-Te-Ti-V-W-Zn-Zr system has recently been developed by SINTEF Materials and Chemistry. The assessed database has been designed for use within the composition space associated with SoG-Si materials. The thermochemical database has further been extended to calculate the surface tensions of liquid Si-based melts. In addition to thermochemical and phase equilibrium calculation, several surface-related properties (temperature and composition gradients, surface excess quantity etc.) are able to simulate simultaneously using the database. The databases can be regarded as the state-of-art equilibrium relations in the Si-based multicomponent system.

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“…àà From Kobayashi. [16] § § From Sim et al [17] The macrosegregation in directionally solidified Si ingots was also examined when the initial melt had a composition different from that of the MG-Si. Kvande et al [36] grew ingots from electronic grade Si at a growth rate of 4 lm seconds -1 in a vertical Bridgman furnace.…”

Section: B Macrosegregation In Silicon Ingotsmentioning

confidence: 99%

“…In Table I, the equilibrium segregation coefficient and the solubility of several impurities in solid Si (considering the equilibrium with solid precipitates) are shown. [8][9][10][11][12][13][14][15][16][17] If the Si-impurity binary phase diagram is available, this solubility is usually the maximum concentration at the solvus line. Because of macrosegregation, the initial part of the solidified ingot is much purer than the remaining ingot, indicating a refining of the feedstock composition.…”

Section: Introductionmentioning

confidence: 99%

Macrosegregation of Impurities in Directionally Solidified Silicon

Martorano

Neto

Oliveira

et al. 2010

Metall Mater Trans A

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Directional solidification of molten metallurgical-grade Si was carried out in a vertical Bridgman furnace. The effects of changing the mold velocity from 5 to 110 lm seconds -1 on the macrosegregation of impurities during solidification were investigated. The macrostructures of the cylindrical Si ingots obtained in the experiments consist mostly of columnar grains parallel to the ingot axis. Because neither cells nor dendrites can be observed on ingot samples, the absence of precipitated particles and the fulfillment of the constitutional supercooling criterion suggest a planar solid-liquid interface for mold velocities £10 lm seconds -1 . Concentration profiles of several impurities were measured along the ingots, showing that their bottom and middle are purer than the metallurgical Si from which they solidified. At the ingot top, however, impurities accumulated, indicating the typical normal macrosegregation. When the mold velocity decreases, the macrosegregation and ingot purity increase, changing abruptly for a velocity variation from 20 to 10 lm seconds -1 . A mathematical model of solute transport during solidification shows that, for mold velocities ‡20 lm seconds -1 , macrosegregation is caused mainly by diffusion in a stagnant liquid layer assumed at the solid-liquid interface, whereas for lower velocities, macrosegregation increases as a result of more intense convective solute transport.

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Boron segregation control in silicon crystal ingots grown in Czochralski process

Cited by 22 publications

References 20 publications

Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

A Thermochemical Database for the Solar Cell Silicon Materials

Macrosegregation of Impurities in Directionally Solidified Silicon

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