Bottom-anti-reflective coatings (BARC) for LFLE double patterning process

Sakamoto, Rikimaru; Endo, Toshihiko; Ho, Bang-Ching; Ishida, Tomoyuki; Kato, Masashi; Fujitani, Noriaki; Onishi, Ryuji; Hiroi, Yoshiomi; Maruyama, Daisuke

doi:10.1117/12.837156

Cited by 4 publications

(2 citation statements)

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“…For the LFLE process, a chemical treatment of the resist freezes the pattern after the first lithography step, and a second lithography process creates the second pattern after a second resist film is coated over the first pattern without etching. 6,7) The litho-cure-litho-etch (LCLE) process includes a simple curing process instead of chemical treatment of the LFLE process. Using the LCLE process, a modified LFLE process, can reduce the number of process steps, which can improve fabrication yield.…”

Section: Introductionmentioning

confidence: 99%

Sensitivity of Process Parameters on Pattern Formation of Litho–Cure–Litho–Etch Process

Kim

2012

Jpn. J. Appl. Phys.

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Semiconductor manufacturing has depended on the high resolution of optical lithography. As the wavelength becomes shorter for the resolution, the light source and optics become increasingly complex and expensive. Therefore, to extend optical lithography's useful life at greater resolution, the litho–cure–litho–etch (LCLE) process has been introduced as an alternative technique. In this study, the LCLE process is modelled and simulated to explore the pattern formation between the two lithography processes (litho 1 and litho 2). This process allows for the physical phenomena of pattern formation to be better understood. The sensitivity of simulation parameters for simulated profiles is analyzed by Taguchi analysis. Through the sensitivity of these easy-to-optimize parameters, LCLE lithography processes can be effectively predicted.

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Section: Introductionmentioning

confidence: 99%

Sensitivity of Process Parameters on Pattern Formation of Litho–Cure–Litho–Etch Process

Kim

2012

Jpn. J. Appl. Phys.

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“…Although a model compound to understand the KolbeSchmitt reaction in the chosen novel media, 2,4-dihydroxybenzoic acid is also of commercial interest. It has been recently claimed to be useful in laminating formulations to improve adhesion between metal materials and resins [9] and underlayer films [10], in co-crystals for pharmaceutical applications [11] and for the preparation of phenolic resins for photosensitive compositions [12,13]. It should be noted that Kolbe-Schmitt reactions do not proceed to completion, and that 50-60 % maximum yields are obtained after 2 h, even at high excesses of CO 2 [14].…”

Section: Introductionmentioning

confidence: 99%

Microwave‐Assisted Kolbe‐Schmitt Synthesis Using Ionic Liquids or Dimcarb as Reactive Solvents

et al. 2009

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The activation of relatively inert carbon dioxide as a building block for organic products is of interest from both ecological and chemical points of view. One of the few industrially relevant processes using CO 2 is the Kolbe-Schmitt synthesis. Two strategies to obtain the carboxylated product 2,4-dihydroxybenzoic acid from resorcinol are presented: both Dimcarb and hydrogencarbonate-or methylcarbonate-based ionic liquids are employed as reactive solvents in a microwaveassisted reaction. Reaction optimization shows that the ionic liquids are more reactive than Dimcarb. However, Dimcarb offers advantages with regard to ecological aspects, such as the Global Warming and Human Toxicity Potential and the Cumulative Energy Demand, which were assessed as part of the process development.

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Photopatternable inorganic hardmask

Telecky

Xie

Stowers

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors present a directly photopatternable inorganic hardmask for 193 nm lithography based on the solution-deposited dielectric metal oxide sulfate (MSOx) system. To demonstrate pattern fidelity, 18 nm half-pitch features were written at a dose near 240 μC/cm2 (30 keV) with line width roughness values between 1.6 and 1.8 nm. Well-resolved and uniform 30 nm contact holes were fabricated via a litho-freeze-litho-etch process employing electron beam exposure and a simple thermal freeze. ZircSOx has a high index of refraction approaching 1.9 at 193 nm, and the extinction coefficient, k, can be varied by an order of magnitude by substituting Zr with Hf. Optical interference lithography at 193 nm was used to realize 60 nm half-pitch lines in MSOx at a dose of 25 mJ/cm2.

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Bottom-anti-reflective coatings (BARC) for LFLE double patterning process

Cited by 4 publications

References 0 publications

Sensitivity of Process Parameters on Pattern Formation of Litho–Cure–Litho–Etch Process

Sensitivity of Process Parameters on Pattern Formation of Litho–Cure–Litho–Etch Process

Microwave‐Assisted Kolbe‐Schmitt Synthesis Using Ionic Liquids or Dimcarb as Reactive Solvents

Photopatternable inorganic hardmask

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