Bottom-ARC optimization methodology for 0.25-μm lithography and beyond

Beeck, Maaike Op de; Vandenberghe, Geert; Jaenen, Patrick; Zhang, Fenghong; Delvaux, Christie; Richardson, Paul M.; Puyenbroeck, Ilse Van; Ronse, Kurt G.; Lamb, James E.; Hilst, Johan B. C. van der; Wingerden, J. van

doi:10.1117/12.310762

Cited by 9 publications

(7 citation statements)

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“…Then, the main effect of BARC composition and thickness variations on CD variation is an increase of the CD swing amplitude for resist thickness variations. This swing induced CD variation ACD829/CD is calculated as a function of the BARC parameter variation: (1) for the situation depicted in Fig. 1.…”

Section: Swing Due To Residual Barc Reflectivitymentioning

confidence: 99%

Optimization of substrate reflectivity, resist thickness, and resist absorption for CD control and resolution

Wingerden

1999

SPIE Proceedings

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Improvement of CD control can be achieved by reduction of substrate reflectivity effects. On highly reflective substrates such as metals, dyed resists are used most of the time. Especially for poly gate level patterning, the use of Bottom Anti Reflective Coatings has become common practice. While originally organic BARCs dominated, interest is gradually shifting towards inorganic BARCs of the SiOxNy type. Their highly conformal deposition flOW really allows for tuning towards zero reflectivity, even on substrates with topography. Furthermore, the use of inorganic BARC as a hard mask for etching allows for a thinner resist layer. This reduction of the resist thickness is advantageous for obtaining high resolution.It should be realised, however, that while resist thickness reduction improves resolution, it increases CD swing effects. Also, increased resist absorption reduces CD swing, but negatively influences resolution on substrates with a low reflectivity. Thus, while resist absorption, resist thickness and substrate reflectivity can be used as parameters to optimise process performance, optimum conditions for CD control and resolution are generally different.The subject of this paper is how to determine optimum values for resist absorption, resist thickness and substrate reflection. We quantify the effect of these parameters on both CD control and resolution. Furthermore, requirements for BARC parameter variations are discussed. Finally, practical boundary conditions on increasing resist absorption a:nd thickness for better CD control are determined.

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Section: Swing Due To Residual Barc Reflectivitymentioning

confidence: 99%

Optimization of substrate reflectivity, resist thickness, and resist absorption for CD control and resolution

Wingerden

1999

SPIE Proceedings

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“…SAMPLE's built-in model of a chemically amplified negative photoresist [16] was used. An antireflective layer underneath the photoresist was used to reduce standing-wave effects [17].…”

Section: Photoresist Thickness Effectsmentioning

confidence: 99%

Measurement of wave-front aberrations in high-resolution optical lithographic systems from printed photoresist patterns

Yeung

2000

IEEE Trans. Semicond. Manufact.

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A new method of measurement of wave-front aberrations in high-resolution optical lithographic systems used for semiconductor manufacturing is proposed. The method is based on the measurement of the positional shifts and focus offsets of a set of printed photoresist grating patterns with different periods and orientations, produced under nearly fully coherent illumination condition. The proposed experimental procedures are described in detail and various sources of systematic and random errors are discussed. It is estimated that a measurement precision of /50 for the wave-front aberrations at selected points on the lens pupil can be achieved with this method.

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“…The problem of light scattering by wafer topography has become of less importance due to the successful and widespread use of antireflective layers to suppress light scattering during exposure [72]. The following discussion will focus on the problem of light scattering through mask apertures, although the numerical techniques used to solve this problem are equally applicable to the problems of alignment-target scattering and linewidth measurement.…”

Section: Full Solution Of Maxwell's Equations For Imaging Light mentioning

confidence: 99%