Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

Molecular beam epitaxy of InAs nanowires in SiO2nanotube templates: challenges and prospects for integration of III–Vs on Si

“…InAs nanowires were then grown in the ONTs in a DCA P600 MBE system. Before introduction into the MBE growth chamber, samples were dipped for 2 s in poly-silicon etch solution [HNO 3 (70%):HF(49%):H 2 O] in order to remove the native oxide and smoothen the silicon surface [24]. Growth parameters (the substrate temperature T S , the growth time t, the In and As 4 beam equivalent pressures P In and P As ) were systematically varied one parameter at the time.…”

GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

“…SAE and SAG have proven to be effective techniques for the synthesis of III-V nanostructures such as NWs, 34,35 tripods, 36 and V-shaped nanofins. 37,38 SAE is carried out on nanopatterned substrates at high temperature in such a way that the sticking coefficient of the adatoms is zero on the mask and non-zero in the etched openings. 39 The growth of GaAs nanomembranes (NMs) on GaAs (111)B substrates has been achieved by etching long slits along the 〈112〉 family of directions, as reported for both metalorganic chemical vapour deposition (MOCVD) 40 and molecular beam epitaxy (MBE).…”