Bottom-up fill of copper in high aspect ratio via holes by electroless plating

Shingubara, Shoso; Wang, Z.; Yaegashi, Osamu; Obata, Ryo; Sakaue, Hiroyuki; Takahagi, Takayuki

doi:10.1109/iedm.2003.1269186

Cited by 10 publications

(10 citation statements)

References 2 publications

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“…Void-free filling of high aspect ratio via-holes was reported [44][45][46][47][48][49][50][51][52][53][54][55] with the proper choice of plating additives such as SPS and mercapto alkyl carboxylic acids as accelerator, and PEG-PPG triblock copolymers as inhibitors [48][49][50]. Void-free electroless copper deposition in sub-micrometer trenches was obtained in the presence of the single poly(ethylene glycol) (PEG) as inhibitor [44,51] as well as accelerating species such as SPS [52,53] and its derivatives, 3-N,N-dimethylamino-dithiocarbamoyl-1-propanesulfonic acid (DPS) [54] and 2-mercapto-5-benzimidazole-sulfonic acid (MBIS) [55].…”

Section: Vlsi Ics Interconnectsmentioning

confidence: 99%

30 years of electroless plating for semiconductor and polymer micro-systems

Shacham‐Diamand

Osaka

Okinaka

et al. 2015

Microelectronic Engineering

149

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Electroless deposition (ELD) is a well-known method for preparing thin films of metals and their alloys. It is a highly selective method allowing additive patterning of isolated and embedded structures on insulating substrates, e.g. glass, plastic or ceramic. It is a relatively low temperature (less than the boiling point of the electrolyte) and low cost process compared to other physical and chemical vapor deposition methods. ELD features uniform and normally conformal deposition (additives may affect its conformality) with low defect density and some unique material properties. In the last 30 years electroless plating of metals (e.g. copper, gold, nickel, cobalt, palladium, iron, silver, etc.) and their alloys, was demonstrated for micro system applications: microelectronics, micro electro mechanics, micro electro optics and microfluidics, micro fuel cells, micro batteries etc. Electroless plating was also demonstrated on nano structures, both artificial and natural. In this paper we present a short tribute to the recent advances in electroless plating in the last 30 years. Those advances and innovations are due to the work of many scientists and engineers on a time span started in the 19 th century. The progress in electroless plating followed the need and the trend for better metallization technologies for complex structures with critical dimensions that had been shrinking continuously in the last few decades.

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Section: Vlsi Ics Interconnectsmentioning

confidence: 99%

30 years of electroless plating for semiconductor and polymer micro-systems

Shacham‐Diamand

Osaka

Okinaka

et al. 2015

Microelectronic Engineering

149

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“…The bottom-up filling of electroless copper usually depends on inhibition of the Cu deposition rate at the surface of substrate or acceleration of the Cu deposition rate in the bottom of trenches to achieve a relative high deposition rate of electroless copper in the bottom of trenches. Shingubara et al [1][2][3] achieved void-free filling of high aspect ratio via-holes with the addition of bis-3-sulfopropyl-disulfide (SPS). Wang et al 4,5 investigated on the bottom-up filling behavior of the plating bath containing mercapto alkyl carboxylic acids.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Bottom‐up Filling in Electroless Plating with an Addition of PEG, PPG and EPE

Zhou

Wang

et al. 2011

Chin. J. Chem.

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The bottom-up filling capabilities of electroless copper plating bath with an addition of additives, such as polyethylene glycol (PEG), polypropylene glycol (PPG) and triblock copolymers of PEG and PPG with ethylene oxide terminal blocks termed EPE, were investigated by the cross-sectional scanning electron microscopy (SEM) observation of sub-micrometer trenches. Though three additives had inhibition for electroless copper deposition, the suppression degrees of three additives were different. EPE-2000 had the strongest suppression for electroless copper deposition, and the suppression of PEG-2000 was the weakest. The bottom-up filling capability of electroless copper was investigated in a plating bath containing different additives with the concentration of 2.0 mg/L. The cross-sectional SEM observation indicated the trenches with the width of 280 nm and the depth of 475 nm were all completely filled by the plating bath with an addition of EPE-2000, but the trenches were not completely filled by the plating bath with an addition of PEG-2000 or PPG-2000, and some voids appeared. Linear sweep voltammetry measurement indicated that three additives all inhibited the cathodic reduction reaction and the anodic oxidation reaction, and the inhibition of EPE-2000 was the strongest among three additives, which agreed with that of the deposition rate of electroless copper. Significant differences in surface roughness of deposited copper film were observed by UV-visible near-infrared for different suppressors, and the bright and smooth of deposited copper film were in accordance with the inhibition of three additives.

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“…10,11 We first found that the bottom-up filling characteristic of electroless plating could be obtained with addition of bis͑3-sulfopropyl͒disulfide ͑SPS͒ in the plating bath, and the bottom-up ratio of Cu deposition increased with SPS concentration. [12][13][14][15] SPS inhibited deposition of electroless Cu plating, and the inhibition of SPS on the surface was greater than that at the bottom of the holes, which may be attributed to slow diffusion of SPS from the plating bath to the bottom of the hole. As it was known, the inhibition of SPS on electroless Cu plating is related to -S-S-group, and -SO 3 H group was used to increase solubility of SPS in plating bath.…”

Section: Introductionmentioning

confidence: 85%

Bottom-up fill mechanisms of electroless copper plating with addition of mercapto alkyl carboxylic acid

Wang

Liu

Jiang

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Copper electrodeposition is used in the damascene process for the fabrication of interconnections of ultralarge-scale integrated semiconductor devices. Copper electroless plating is one of the most promising processes for the formation of a seed layer for electroplating. In this article, the effect of additives of mercapto alkyl carboxylic acid (MACA) such as 3-mercaptopropionic acid, 11-mercaptoundecanoic acid, and 16-mercaptohexadecanoic acid on bottom-up filling of electroless copper in deep submicrometer via holes was investigated. The inhibition of copper plating deposition on the plane surface was observed with an addition of MACAs, and bottom-up fill was confirmed for MACAs with alkyl chain numbers of 3, 11, and 16. The bottom-up fill tendency was enhanced with increasing alkyl chain number. This result strongly suggests that the diffusion coefficient of inhibitor molecule plays an important role for bottom-up fill mechanisms, because MACA with longer alkyl chain has smaller diffusion coefficient than that with shorter alkyl chain.

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Bottom-up fill of copper in high aspect ratio via holes by electroless plating

Cited by 10 publications

References 2 publications

30 years of electroless plating for semiconductor and polymer micro-systems

30 years of electroless plating for semiconductor and polymer micro-systems

Comparison of Bottom‐up Filling in Electroless Plating with an Addition of PEG, PPG and EPE

Bottom-up fill mechanisms of electroless copper plating with addition of mercapto alkyl carboxylic acid

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