Bound excitons at doubly ionizable acceptors in GaSb

Noack, René; Rühle, W. W.; Morgan, T. N.

doi:10.1103/physrevb.18.6944

Cited by 39 publications

(9 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…4,8) In order to fit a curve to the experimental pðTÞ, the double acceptor model was assumed. 6) According to the double acceptor model, 2,3,5) the acceptor behaves as a singly ionized acceptor (20-40 meV) or a doubly ionized acceptor (60-100 meV). In this case, the density of the 20-40 meV acceptor should be equal to that of the 60-100 meV acceptor.…”

Section: Discussionmentioning

confidence: 99%

“…Using the temperature dependence of the hole concentration, pðTÞ, obtained by Hall-effect measurements, the densities and energy levels of residual acceptor species in undoped GaSb, which exhibited p-type conduction, were determined. [2][3][4][5][6][7][8][9] Although the acceptor density and acceptor level are usually determined using the pðTÞ-1=T curve, such analysis cannot be applied in the case of semiconductors with more than one acceptor species or in the case of compensated semiconductors. Moreover, it is difficult to obtain reliable values by fitting a curve to the experimental data of pðTÞ, because too many curve-fitting parameters must be simultaneously determined.…”

Section: Introductionmentioning

confidence: 99%

“…In order to reduce the number of curve-fitting parameters, the following assumptions were adopted in the case of undoped GaSb. According to the double acceptor model where the acceptor can be ionized singly as well as doubly, 2,3,5,6) it was assumed that the two acceptor species had the same densities, but different energy levels. In the other cases, it was assumed that there was a very shallow acceptor as well as two acceptor species with acceptor levels of 40 meV and 80 meV, 7) or that there were two acceptor species with acceptor levels of 31.2 meV and 102 meV.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy

Matsuura

Morita

Nishikawa

et al. 2002

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Without any assumptions regarding residual impurity species in an undoped semiconductor, it is experimentally demonstrated that the densities and energy levels of impurities can be precisely determined by the graphical peak analysis method based on Hall-effect measurements, referred to as free carrier concentration spectroscopy (FCCS). Using p-type undoped GaSb epilayers grown by molecular beam epitaxy (MBE), the densities and energy levels of several acceptor species are accurately determined. Five acceptor species are detected in the undoped GaSb epilayers grown by MBE, while two are also found in ptype undoped GaSb wafers. A 21-41 meV acceptor and a 75-99 meV acceptor exist both in the epilayers and in the wafer. On the other hand, a 164-181 meV acceptor is detected in epilayers grown at an Sb 4 /Ga flux beam equivalent pressure ratio of 8 or 10, while a 259 meV acceptor is found in the epilayer grown at Sb 4 /Ga = 6. In addition, a very shallow acceptor, which is completely ionized at 80 K, is found in the epilayers. The densities of the very shallow acceptor and the 21-41 meV acceptor are minimum at Sb 4 /Ga ¼ 8, which makes the hole concentration lowest in the temperature range of the measurement.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy

Matsuura

Morita

Nishikawa

et al. 2002

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…For Er diffused crystals the two exciton peaks observed in the reference spectrum on fig.1, have disappeared, while one peak centered at 0.801eV appears. This peak can be related with the line BE3 identified in the bibliography [9,10] as a recombination of excitons with an acceptor. It is know that Er ions normaly form compounds such as ErSb in antimonide materials [2].…”

Section: Photoluminescence Analysismentioning

confidence: 96%

Analysis of Er incorporation on GaSb substrates by diffusion

Ruiz¹,

Plaza

Bermúdez

et al. 2004

Cryst. Res. Technol.

View full text Add to dashboard Cite

On this work, two different ways of introducing Er ions to GaSb crystals, one bulk doped and the other Er diffused are compared in order to obtain Er luminescence on GaSb matrix. For this objetive, photoluminescence measurements indicate that there is Er luminescence on the diffused sample, while on the bulk doped, not only there is no Er activation, but crystal quality decreases severally. Surface analysis of diffused sample shows the presence of holes all over the surface.

show abstract

“…According to the double acceptor model, 2,3,5,6) V Sb þ and V Sb 2þ are considered. In this case, N A1 should be equal to N A2 .…”

Section: Brief Communicationmentioning

confidence: 99%

Accurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration

Matsuura¹,

Nishikawa²,

Segawa³

et al. 2006

jjap

View full text Add to dashboard Cite

Without any assumptions regarding residual impurity species and intrinsic defects in an undoped semiconductor, it is experimentally demonstrated that the densities and energy levels of impurities and defects can be precisely determined by a graphical peak analysis method based on Hall-effect measurements, referred to as free-carrier-concentration spectroscopy (FCCS). By FCCS, the number of acceptor species in p-type undoped In 0:2 Ga 0:8 Sb epilayers is determined, and the densities and energy levels of these acceptor species are accurately estimated. Two acceptor species, whose acceptor levels are E V þ 25 meV and E V þ 86 meV, are detected, where E V is the valence band maximum. The density of the E V þ 25 meV acceptor increases with Sb 4 =ðIn þ GaÞ flux beam equivalent pressure (BEP) ratio, whereas the density of the E V þ 86 meV acceptor decreases with increasing BEP ratio. These observations are not consistent with the conventional assumption that these acceptor species are V Sb þ and V Sb 2þ in GaSb-based semiconductors, where V Sb is the Sb vacancy.

show abstract

Bound excitons at doubly ionizable acceptors in GaSb

Cited by 39 publications

References 12 publications

Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy

Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy

Analysis of Er incorporation on GaSb substrates by diffusion

Accurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration

Contact Info

Product

Resources

About