Bound to continuum absorption coefficient for spherical and conical quantum dots

Modeling And Characterization of Carrier Mobility For Truncated Conical Quantum Dot Infrared Photodetectors

“…This interest is in turn motivated by the inherent characteristics of the various quantum (well, wire, and dot) to tune the optical and electronic characteristics of various semiconductors making them more suitable for specific applications including thermal imaging, remote sensing, photovoltaics, and infrared photodetectors [2]- [3]. However, quantum dot infrared photodetectors (QDIPs) have particularly gained a significant momentum among modern and well-established infrared (IR) photodetectors including quantum well infrared photodetectors (QWIPs) and mercury-cadmium-telluride photodetectors (HgCdTe) since they have the following potential advantages, they: Retain high 3D carrier confinement of electron wave function, Show high normal photon absorption, Possess low dark current capacity; a major source of detection noise, Operate at high temperatures, Have extended photoexcitation lifetime and Exhibit phonon bottleneck effect [2]- [7] .…”