Boundary conditions in a real bipolar semiconductor-metal junction

Abstract

Boundary conditions for non-equilibrium carrier densities and electric potential in a real metal-semiconductor junction are obtained on the basis of the continuity equations and the Poisson equation. The non-steady state case has been analysed. It is taken into account that holes do not penetrate into metal and the chemical potential of metal is constant. The both cases of open or loaded by a resistor external electric circuit are considered.

The influence of phonon drag by diffusion carrier flux on the photoacoustic effect in semiconductors

“…The gradient of the EHP concentration and the DC of phonon heat flux have maximum values in this case [20]. It is shown in [21] that maximum temperature variation on the illuminated surface takes place at high light absorption coefficient. Therefore, below, we shall investigate the case of surface light absorption.…”

“…The diffusion component (DC) of the phonon heat flux occurs when the thermal drag of phonons takes place [20]. A new channel of heat removal (DC of phonon heat flux) essentially changes the distribution of the semiconductor lattice temperature [20,21]. In particular, semiconductor cooling is possible when one sample surfaces is illuminated by strongly absorbed light and phonon diffusion drag by electron-hole pair (EHP) flux is large.…”

Far-Infrared Study of BaTi4O9 Microwave Dielectric Ceramics

“…The expressions for partial currents in the linear approximation with small parameters δn/n 0 1, δp/ p 0 1, e|δϕ|/kT 1 take the form [4,6] j n = −σ n dδφ n dx ,…”

“…However, the PI emf is measured across the metallic contacts placed on illuminated and dark semiconductor surfaces. Firstly, this results in modification of boundary conditions in the real metal-semiconductor junction because of the PI electron's ability to move from semiconductor into metal and the PI hole's ability to accumulate near the illuminated surface [4,5]. Therefore the charge value in the SCL increases as compared with that of [3].…”

Influence of energy band distortion on the Hall emf in bipolar semiconductors

“…This field separates the non-equilibrium carriers and acts upon the non-equilibrium space charge region (screening mode [5]) formation. The exact solution of the continuity equations and the Poisson equation together with the boundary conditions [6] shows that the Dember emf essentially depends on the surface potential [7]. One may expect such behaviour of the Hall emf in samples with thickness less than the diffusion length.…”