A new method for photo-induced electromotive force theoretical study of bipolar semiconductors accounting for the distortion of energy bands near the semiconductor surface is presented. This method is based on the exact solution of the continuity equations and the Poisson equation and on the boundary conditions derived for the real metal-semiconductor junction. It is shown that photo-induced electromotive force essentially depends on the surface potential for certain surface parameters.

Boundary conditions for non-equilibrium carrier densities and electric potential in a real metal-semiconductor junction are obtained on the basis of the continuity equations and the Poisson equation. The non-steady state case has been analysed. It is taken into account that holes do not penetrate into metal and the chemical potential of metal is constant. The both cases of open or loaded by a resistor external electric circuit are considered.

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The distribution of the lattice temperature in a semiconductor plate is described for the case when one of the plate surfaces is illuminated by strongly absorbed light. It is shown that the temperature of the illuminated surface and the average temperature of the sample became lower than the temperature of the surrounding medium when the diffusion flux of carriers drags phonons and certain boundary conditions are used.

A theory of interface recombination in the semiconductor-semiconductor junction is developed. The interface recombination rate dependence on the nonequilibrium carrier densities is derived on the basis of a model in which the interface recombination occurs through the mechanism of trapping. The general relation between the interface recombination parameters at small carrier density deviation from the equilibrium ones is obtained. The validity of this relation is proved considering the generation of the Hall electric field in the extrinsic semiconductor sample. The anomalous Hall electromotive force in a weak magnetic field was investigated and interpreted by means of a new interface recombination model. The experimental data corroborate the developed theory.