Bovine Serum Albumin-Based Thin-Film Capacitors for Flexible Electronic Applications

Mukherjee, Prajukta; Acharyya, Aritra; Mallik, S.

doi:10.1080/03772063.2022.2098183

IETE Journal of Research

2022

DOI: 10.1080/03772063.2022.2098183

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Bovine Serum Albumin-Based Thin-Film Capacitors for Flexible Electronic Applications

Prajukta Mukherjee

Aritra Acharyya

S. Mallik

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2024

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Fabrication and electrical properties of flexible polymer-based MIM capacitors of high-k nanolaminate dielectrics of HfO₂–SnO₂–TiO₂ with ultrathin Al₂O₃ insertion layer by plasma-enhanced atomic layer deposition

Zhang,

Wang,

Gao

et al. 2024

Flex. Print. Electron.

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Flexible metal-insulator-metal (MIM) capacitors of high-k nanolaminate HfO2-SnO2-TiO2 thin films were fabricated on several polymer substrates of polyethylene terephthalate (PET), polyimide (PI) and epoxy resin (epoxy) at 80 oC by plasma-enhanced atomic layer deposition (PEALD). The electrical properties were optimized by adjusting the sub-cycle ratio of Hf: Sn: Ti to 6: 5: 4. In order to reduce the leakage current density of flexible capacitors, the ultrathin Al2O3 layer varying from 0.5 to 1.5 nm was inserted to form Al2O3/HfO2-SnO2-TiO2/Al2O3 stacking capacitors. The effect of the Al2O3 insertion layer thickness and the super-cycle number of HfO2-SnO2-TiO2 on the capacitance density, leakage, and quadratic voltage linearity was investigated. Under optimal processing, flexible MIM capacitors could stand 40000 bending cycles at curvature radius of 8.2 mm, indicative of better electrical stability. Moreover, compared with the polymer-based HfO2-SnO2-TiO2 capacitors, the introduction of 1 nm Al2O3 ultrathin layer greatly decreases the leakage current density by 4 orders of magnitude (10-8 A/cm2) with relative lower voltage linearity (350-540 ppm/V2), but the capacitance density also declines (~3 fF/μm2) simultaneously. Despite this, the method of inserting Al2O3 ultra-thin layer is still an effective method to improve the electrical performances of polymer-based HfO2-SnO2-TiO2 nanolaminate capacitors for flexible electronics.

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Fabrication and electrical properties of flexible polymer-based MIM capacitors of high-k nanolaminate dielectrics of HfO₂–SnO₂–TiO₂ with ultrathin Al₂O₃ insertion layer by plasma-enhanced atomic layer deposition

Zhang,

Wang,

Gao

et al. 2024

Flex. Print. Electron.

View full text Add to dashboard Cite

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Bovine Serum Albumin-Based Thin-Film Capacitors for Flexible Electronic Applications

Cited by 1 publication

References 43 publications

Fabrication and electrical properties of flexible polymer-based MIM capacitors of high-k nanolaminate dielectrics of HfO₂–SnO₂–TiO₂ with ultrathin Al₂O₃ insertion layer by plasma-enhanced atomic layer deposition

Fabrication and electrical properties of flexible polymer-based MIM capacitors of high-k nanolaminate dielectrics of HfO₂–SnO₂–TiO₂ with ultrathin Al₂O₃ insertion layer by plasma-enhanced atomic layer deposition

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Bovine Serum Albumin-Based Thin-Film Capacitors for Flexible Electronic Applications

Cited by 1 publication

References 43 publications

Fabrication and electrical properties of flexible polymer-based MIM capacitors of high-k nanolaminate dielectrics of HfO2–SnO2–TiO2 with ultrathin Al2O3 insertion layer by plasma-enhanced atomic layer deposition

Fabrication and electrical properties of flexible polymer-based MIM capacitors of high-k nanolaminate dielectrics of HfO2–SnO2–TiO2 with ultrathin Al2O3 insertion layer by plasma-enhanced atomic layer deposition

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Product

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Fabrication and electrical properties of flexible polymer-based MIM capacitors of high-k nanolaminate dielectrics of HfO₂–SnO₂–TiO₂ with ultrathin Al₂O₃ insertion layer by plasma-enhanced atomic layer deposition

Fabrication and electrical properties of flexible polymer-based MIM capacitors of high-k nanolaminate dielectrics of HfO₂–SnO₂–TiO₂ with ultrathin Al₂O₃ insertion layer by plasma-enhanced atomic layer deposition