Advances in Brazing 2013
DOI: 10.1533/9780857096500.2.160
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Brazing of diamonds and cubic boron nitride

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Cited by 15 publications
(14 citation statements)
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“…Obtaining crack-free metal-diamond composite is a challenging task because such material tends to graphitize at relatively high temperatures. As known [22,28], diamond particles tend to graphitize after heating to high temperatures about 1500 • C in the inert atmosphere and 1000 • C in the standard atmosphere. Nanodiamond graphitization at atmospheric pressure starts approximately in the temperature range of 670-800 • C [29].…”
Section: Resultsmentioning
confidence: 94%
“…Obtaining crack-free metal-diamond composite is a challenging task because such material tends to graphitize at relatively high temperatures. As known [22,28], diamond particles tend to graphitize after heating to high temperatures about 1500 • C in the inert atmosphere and 1000 • C in the standard atmosphere. Nanodiamond graphitization at atmospheric pressure starts approximately in the temperature range of 670-800 • C [29].…”
Section: Resultsmentioning
confidence: 94%
“…Furthermore, Buhl et al (2012) have successfully used this alloy to braze diamond particles on a steel substrate, achieving good bonding between the diamonds and the matrix material. This good bonding is due the 10 weight per cent content of titanium (and Zr) in the alloy, forming very stable and uniform epitaxial TiC layers at the interface between the brazing alloy and the diamond particles, as pointed out by Rabinkin et al (2013).…”
Section: Matrix Materialsmentioning
confidence: 84%
“…An important difference, however, is the cyclic heating impact on diamond particles due to the layer-wise build process, which basically supports the tendency of diamond to graphitize. As natural diamond is known to graphitize at temperatures between about 1,500°C in an inert atmosphere or vacuum and about 1,000°C in normal air or in diamond-metal composites (Rabinkin et al, 2013), a limitation of the melting temperature of the matrix material to values below about 1,000°C is beneficial. Temperatures above might also be acceptable because the graphitization process is slow, whereas the heating cycle is very short.…”
Section: Introductionmentioning
confidence: 99%
“…It is a better semiconductor as compared to diamond and other commonly used semiconductors such as Si and GaN including, wide indirect band gap of 6.5 eV, can be doped as a shallow p-type semiconductor with Be and Mg and as an n-type with Si and Zn [13,14]. It is inert with regards to ferrous materials even at high temperatures while diamond forms iron carbide at about 600°C [3,5].These properties have motivated the use of c-BN in numerous industrial, chemical and electrical applications [15][16][17][18].…”
Section: Accepted Manuscriptmentioning
confidence: 99%