Breakdown field enhancement of Si-based MOS capacitor by post-deposition annealing of the reactive sputtered ZrOxNy gate oxide

Chew, Chun Chet; Goh, Kian Heng; Gorji, Mohammad Saleh; Tan, Chee Ghuan; Ramesh, S.; Wong, Yew Hoong

doi:10.1007/s00339-016-9624-7

Cited by 14 publications

(5 citation statements)

References 28 publications

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“…Furthermore, the crystallite size of In 2 O 3 NPs was estimated from Williamson–Hall (W–H) models as [40]

β_{h k l} \cos θ = \frac{K λ}{D} + 4 ε \sin θ

Fig. 4 shows the W–H plot analysis for all the samples.…”

Section: Resultsmentioning

confidence: 99%

Enhanced structural properties of In ₂ O ₃ nanoparticles at lower calcination temperature synthesised by co‐precipitation method

Goh¹,

Johan

Wong³

2018

Micro & Nano Letters

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Indium oxide nanoparticles (In 2 O 3 NPs) were formed by calcining the optimised as-prepared indium hydroxide (In(OH) 3) NPs. The as-prepared In(OH) 3 NPs were synthesised at optimal pH 10 through co-precipitation method at various calcination temperatures (200, 300, 400, 500, 600°C) for 2 h. Characterisation of the samples was performed by thermogravimetric (TGA and differential thermal, DTA) analysis, high-resolution transmission electron microscope (HRTEM), X-ray diffractometer (XRD), Fourier transform infrared spectroscopy, and Raman spectroscopy. The complete conversion to In 2 O 3 NPs was reached at 300°C. Besides, the crystallite size of In 2 O 3 NPs calculated by William-Hall equation had the same trend with the values obtained from Scherrer equation. The HRTEM images also showed that the size of In 2 O 3 NPs was within the range of 15-28 nm. Clearly, their work confirmed that the smallest In 2 O 3 NPs (15 nm) with homogenous particle distribution were formed at a lower calcination temperature of 300°C.

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“…Furthermore, the crystallite size of In 2 O 3 NPs was estimated from Williamson–Hall (W–H) models as [40]

β_{h k l} \cos θ = \frac{K λ}{D} + 4 ε \sin θ

Fig. 4 shows the W–H plot analysis for all the samples.…”

Section: Resultsmentioning

confidence: 99%

Enhanced structural properties of In ₂ O ₃ nanoparticles at lower calcination temperature synthesised by co‐precipitation method

Goh¹,

Johan

Wong³

2018

Micro & Nano Letters

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“…The electrolyte used was 0.01 M NaOH (pH = 11). The applied voltage was varied for a set of formation voltage (10,15,20, and 25 V) and holding for 10 min. As-anodised samples were rinsed with deionised water and dried in N 2 stream.…”

Section: Methodsmentioning

confidence: 99%

“…Wilk et al [1] has reviewed on the possibility of the use of various binary oxides to be used as gate oxide. Other works reported on the use of TiO 2 [2,3], Al 2 O 3 [4], ZrO 2 [2,[4][5][6][7], ZrON [8][9][10][11][12][13][14][15], HfO 2 [4,16], TaO 2 [1,3,4], and Gd 2 O 3 [17], as high-κ gate oxide to replace SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution

Wong

Lee

Goh

2017

Micro & Nano Letters

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Formation of anodic samarium oxide thin film by anodisation of 15 nm thin sputtered samarium metal on silicon substrate was systematically investigated. Sputtered Sm on Si substrate was followed by anodisation in 0.01 M NaOH (pH 11) at various applied voltages (10, 15, 20, and 25 V). All anodisation processes were performed for 10 min at room temperature in the bath with constant stirring. The crystallinity of Sm 2 O 3 film was evaluated by X-ray diffraction analysis. The crystallite size of Sm 2 O 3 was calculated by Scherrer equation. The cross-section of 20 V sample was examined by high-resolution transmission electron microscope. The sample anodised at 20 V demonstrated the highest electrical breakdown field of 9.50 MV/cm at 10 −4 A/cm 2. This is attributed to the lowest effective oxide charge, slow trap charge density, average interface trap density, and total interface trap density.

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“…This has resulted in the testing of a wide variety of potential high-k gate oxide materials with HfO 2 , ZrO 2 , SiON, Al 2 O 3 , La 2 O 3 , TiO 2 , Ta 2 O 5 , and Y 2 O 3 each being considered. [19,20,21,22,23,24,25,26] This search has led to interest in the REO offering as they do a raft of desirable properties. Sm 2 O 3 exhibits a high dielectric constant (up to 15 for the amorphous films [27,28,29], and significantly higher in the polycrystalline films [30]), high breakdown electric field (up to 10 MV/cm), large band gap, low leakage current, large conduction band offset with Si, good thermal stability, low frequency dispersion, thermodynamic stability on SiO 2 , and low trapping rates.…”

Section: Introductionmentioning

confidence: 99%

Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations

Olsson

Cai

Cottom

et al. 2019

Computational Materials Science

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Rare earth oxides have shown great promise in a variety of applications in their own right, and as the building blocks of complex oxides. A great deal of recent interest has been focused on Sm 2 O 3 , which has shown significant promise as a high-k dielectric and as a ReRAM dielectric. Experimentally, these thin films range from amorphous, through partially crystalline, to poly-crystalline, dependent upon the synthetic conditions. Each case presents a set of modelling challenges that need to be defined and overcome. In this work, the problem of modelling amorphous Sm 2 O 3 is tackled, developing an atomistic picture of the effect of amorphization on Sm 2 O 3 from a structural and electronic structure perspective.

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Breakdown field enhancement of Si-based MOS capacitor by post-deposition annealing of the reactive sputtered ZrOxNy gate oxide

Cited by 14 publications

References 28 publications

Enhanced structural properties of In ₂ O ₃ nanoparticles at lower calcination temperature synthesised by co‐precipitation method

Enhanced structural properties of In ₂ O ₃ nanoparticles at lower calcination temperature synthesised by co‐precipitation method

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution

Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations

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Breakdown field enhancement of Si-based MOS capacitor by post-deposition annealing of the reactive sputtered ZrOxNy gate oxide

Cited by 14 publications

References 28 publications

Enhanced structural properties of In 2 O 3 nanoparticles at lower calcination temperature synthesised by co‐precipitation method

Enhanced structural properties of In 2 O 3 nanoparticles at lower calcination temperature synthesised by co‐precipitation method

Influence of applied voltage on the physical and electrical properties of anodic Sm 2 O 3 thin films on Si in 0.01 M NaOH solution

Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations

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Enhanced structural properties of In ₂ O ₃ nanoparticles at lower calcination temperature synthesised by co‐precipitation method

Enhanced structural properties of In ₂ O ₃ nanoparticles at lower calcination temperature synthesised by co‐precipitation method

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution