Breakdown of the integer and fractional quantum Hall states in a quantum point contact

Dillard, C.; Lin, Xi; Kastner, M. A.; Pfeiffer, L. N.; West, K. W.

doi:10.1016/j.physe.2012.10.003

Cited by 11 publications

(10 citation statements)

References 38 publications

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“…can all destroy the QH effect; however, determining the dominant cause in a particular device has proven to be challenging. All the above models predicts higher breakdown current with larger sample size, which agrees with the observations in integer QH effect [28] and disagrees with a recent work in fractional QH effect [29]. In short, it is difficult to predict the QH breakdown behavior in graphene based on the previous experience from GaAs/AlGaAs 2DEG, and more experiments are necessary.…”

Section: Nonlinear Transport Of the Qh States In Graphenecontrasting

confidence: 46%

“…The current induced breakdown of QH effect has been widely investigated, mostly in GaAs system, and there are multiple possible explanations [28]. Interestingly, a latest breakdown study in fractional QH effect could not be explained with the existing breakdown theories [29]. Given the special band structure of graphene and its symmetry, there is no obvious prediction for the QH breakdown behavior in graphene, and detailed experimental investigations are necessary.…”

Section: Introductionmentioning

confidence: 99%

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Nonlinear transport of graphene in the quantum Hall regime

et al. 2016

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We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the = ±6 states might be a better target for the quantum resistance standard. IntroductionGraphene, a single layer of graphite, has continued to attract great attention from the scientific and technical communities due to the rich physics of Dirac fermions and the great potential for technological applications [1]. Started from the half-integer and the four fold degeneracy without symmetry breaking of spin or valley degrees of freedom, the quantum Hall (QH) resistance in graphene is expected to be the series of filling factor = ±2, ±6, ±10……., and those Hall plateaus have been experimentally observed since 2005 [2,3]. With the technique of suspending graphene [4] and transferring graphene onto single crystal hexagonal boron nitride (hBN) [5], one can suppress the scattering of carriers from charged impurities [6] and substrate phonons [7], resulting in substantially improved carrier mobility. Symmetry-broken integer QH states and fractional QH states were soon discovered on the improved devices [8][9][10][11][12][13][14][15].Although most of the integer QH and fractional QH studies have been carried in GaAs/AlGaAs heterostructure for its extremely high mobility, similar studies in graphene have attracted lots of attention for a variety of reasons including the peculiar band structure of graphene and the exposure of the two dimensional electron gas (2DEG) in graphene. One interesting question has been raised that if graphene can replace GaAs to be the base of the resistance standard [16,17]. The QH effect has been applied on the resistance unit in the 2 international system since 1990 [18]. However, a redefinition of SI basic units (Kilogram, Ampere, Kelvin and Mole) by 2018 [19] involves the resistance standard from the QH effect. Therefore, the metrology of resistance standard, including a practical (non-SI) definition for increasing potential end users, is getting more and more important. Various works have proved the universality and reproducibility of quantum Hall resistance standard metrology in graphene with accuracy as high as part-per-billion [20][21][22][23][24]. Quantum resistance devices based on graphene have been realized on graphene grown on silicon carbide wafer [20][21][22][23][24][25][26]. More importantly, QH effect can be realized in graphene at room temperature [27], which makes graphene-based QH device a very attractive choice of a practical resistance definition for routine...

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Section: Nonlinear Transport Of the Qh States In Graphenecontrasting

confidence: 46%

Section: Introductionmentioning

confidence: 99%

Nonlinear transport of graphene in the quantum Hall regime

et al. 2016

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“…A consensus of the exact explanation of QHE breakdown has not been reached, but all theories and measurements agree that critical current increases with less confinement condition. A recent experiment reports that FQHE has opposite dependence within a small confinement region, and calls for further theoretical input considering interactions [32]. Understanding the physics of breakdown is important for using the QHE Hall resistance plateau for metrology standard and helpful for some experiments with confinement described later in this review.…”

Section: Figurementioning

confidence: 98%

Recent experimental progress of fractional quantum Hall effect: 5/2 filling state and graphene

Lin

Xie

2014

National Science Review

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The phenomenon of fractional quantum Hall effect (FQHE) was first experimentally observed 33 years ago. FQHE involves strong Coulomb interactions and correlations among the electrons, which leads to quasiparticles with fractional elementary charge. Three decades later, the field of FQHE is still active with new discoveries and new technical developments. A significant portion of attention in FQHE has been dedicated to filling factor 5/2 state, for its unusual even denominator and possible application in topological quantum computation. Traditionally FQHE has been observed in high mobility GaAs heterostructure, but new materials such as graphene also open up a new area for FQHE. This review focuses on recent progress of FQHE at 5/2 state and FQHE in graphene.

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“…The 5/2 state becomes easier to destroy with the deviation from the center of the 5/2 FQH state, as expected. In the breakdown of integer quantum Hall states confined with a QPC [38], the states are more fragile at the high magnetic field side. Similar observation is found for the 5/2 state in this measurement although the asymmetry is not as distinct as the previous measurement.…”

Section: Resultsmentioning

confidence: 99%

Stability of the 5/2 fractional quantum Hall state in a Corbino disc sample with in-plane electric fields

Zhu

Wang

et al. 2018

Physica E: Low-dimensional Systems and Nanostructures

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Among the various geometries to study the fractional quantum Hall effect in two dimensional electron gas, the Corbino disc owns the advantage to probe the bulk properties directly. In this work we explore the influence of in-plane electric fields on the stability of the 5/2 fractional quantum Hall state realized in Corbino geometry. The effect of weak electric fields is investigated at ultra-low temperatures in order to compare with a theoretical proposal of enhanced Pfaffian state under weak electric fields.

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Breakdown of the integer and fractional quantum Hall states in a quantum point contact

Cited by 11 publications

References 38 publications

Nonlinear transport of graphene in the quantum Hall regime

Nonlinear transport of graphene in the quantum Hall regime

Recent experimental progress of fractional quantum Hall effect: 5/2 filling state and graphene

Stability of the 5/2 fractional quantum Hall state in a Corbino disc sample with in-plane electric fields

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