Breakdown voltage and on-resistance considerations in the floating islands metal-oxide semiconductor field-effect transistor

Abstract

This article presents an analytical study of a new power metal-oxide semiconductor field-effect transistor (MOSFET) structure, called 'FLoating Islands MOSFET (FLIMOSFET)', which presents a better trade-off between breakdown voltage and on-resistance compared with conventional VDMOSFETs. The improvement of this trade-off was obtained by inserting one (or several) floating island(s) in the lowly doped epitaxial layer. An analytical model was developed, based on the physical structure of the FLIMOSFET, in order to show the positive effect of the P-floating island on the 'on-resistance/breakdown voltage' compromise.