Breakdown Voltage Prediction of Ultra-Thin Gate Insulator in Electrostatic Discharge (ESD) Based on Anode Hole Injection Model

Kinoshita, Atsuhiro; Mitani, Yuichiro; Matsuzawa, K.; Kawashima, Hiroshi; Sutoh, C.; Kurihara, Jun; Hiraoka, Toshiro; Izumi, H.; Muta, M.; Takayanagi, Motowo; Sato, Naoyuki

doi:10.1109/relphy.2006.251293

Cited by 8 publications

(2 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…P is a function of injected electron energy at the anode (E e ). 26,27) Furthermore, minority carrier ionization was also included in the estimation of p . 28) This index corresponds to the number of generated hot holes at the anode.…”

Section: Deuterium Effect On Interface-state Generation Under Nbt Stressmentioning

confidence: 99%

Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

Mitani¹,

Satake²

2008

jjap

View full text Add to dashboard Cite

In this work, hydrogen release under an applied negative bias temperature (NBT) stress voltage was investigated by comparing interface-state generation between p þ -and n þ -gate/p-channel metal-oxide-silicon field effect transistors (pMOSFETs). Deuterium incorporation into gate dielectrics was also utilized to study hydrogen release at the Si/SiO 2 interface. As results, it was found that interface-state generation in n þ -gate/pMOSFET is more pronounced than that in p þ -gate/pMOSFET even under the same stress oxide voltage. Furthermore, the elimination of interface-state generation by deuterium incorporation is observed only in the case of n þ -gate/pMOSFETs, whereas no isotope effect is observed in p þ -gate/pMOSFETs. The correlation between injected electrons and interface trap generation was investigated considering the flux and energy of injected electrons. In conclusion, at least two kinds of hydrogen release contribute to the interface-state generation under NBT stressing. One is Si-H bond breakage by injected energetic electrons from gate electrodes. The other is the non-predomination of such energetic electrons in hydrogen release.

show abstract

Section: Deuterium Effect On Interface-state Generation Under Nbt Stressmentioning

confidence: 99%

Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

Mitani¹,

Satake²

2008

jjap

View full text Add to dashboard Cite

show abstract

“…The maximum energy of the electrons arriving from the poly gate depends highly on the voltage drop across the oxide (V ox ). Hence V ox has to exceed the band gap of the SiO 2 insulator of ≈ 9 eV before these mechanisms become efficient [13][14][15][16]. This means, when applying conventional oxide fields during NBTS |E ox | < 7 MV/cm, this critical voltage drop is reached as the gate oxide thickness exceeds roughly 13 nm.…”

Section: Introductionmentioning

confidence: 99%

Dependence of the negative bias temperature instability on the gate oxide thickness

Pobegen

Aichinger

Nelhiebel

2010

2010 IEEE International Reliability Physics Symposium

View full text Add to dashboard Cite

The exact location and type of defects created under negative bias temperature (NBT) stress in pMOS field effect transistors is still a highly debated topic. We present a detailed study on equivalent devices with different oxide thicknesses (5 to 30 nm) where we show experimentally that the basic mechanisms behind the NBT instability are the same in thin and thick oxide technologies. In particular, voltage driven degradation like impact ionization or anode hole injection are not the driving forces for the larger degradation of thick oxide devices. Finally, we show that defects created under NBT stress are not solely located at the interface but extend a few nanometers into the oxide.

show abstract

ESD-reliability influence on LV/HV MOSFET devices by different zapping-voltage steps in the transmission-line pulse testing

Chen

Lee

2017

2017 International Conference on Applied System Innovation (ICASI)

View full text Add to dashboard Cite

Breakdown Voltage Prediction of Ultra-Thin Gate Insulator in Electrostatic Discharge (ESD) Based on Anode Hole Injection Model

Cited by 8 publications

References 1 publication

Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface

Dependence of the negative bias temperature instability on the gate oxide thickness

ESD-reliability influence on LV/HV MOSFET devices by different zapping-voltage steps in the transmission-line pulse testing

Contact Info

Product

Resources

About