Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering

Katiyar, Ajit K.; Thai, Kean You; Yun, Won Seok; Lee, Jae Dong; Ahn, Jong Hyun

doi:10.1126/sciadv.abb0576

Cited by 51 publications

(38 citation statements)

References 46 publications

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“…As expected, the effective bandgap decreases with increasing the applied strain, which matches well with the previous reports. [10] The current-voltage (I-V) characteristics of the single crystalline n-type Si (commercially available), corresponding to different applied forces using Au-coated tip (diameter ≈120 µm), is shown in Figure 1c. The details of the experimental geometry are presented in Figure S3 (Supporting Information) along with the original measurement setup (see Figure S4, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

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Controllable, Self‐Powered, and High‐Performance Short‐Wavelength Infrared Photodetector Driven by Coupled Flexoelectricity and Strain Effect

et al. 2021

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This induced internal polarization field, in response, could redistribute the concentration of free carriers within semiconductors and at its contact interface, thereby changes the overall charge transport behavior, indeed analogous to the piezoelectric effect. [1,5] Importantly, strain gradient is the key to the flexoelectric effect; however, applied strain, in principle, will also modulate the electronic structure, which in turn could introduce conceptually innovative and till "forbidden" functionalities. [1,4,6] For instance, applied strain-induced broken crystal symmetry modify the effective masses of charge carriers, which leads to generating a pronounced shift in the effective bandgap of semiconductors, like silicon, TiO 2 , and others. [7][8][9] In fact, theoretically, it has been predicted that the fundamental bandgap of the silicon could be shrunk considerably (up to 1800 nm, e.g., short-wavelength infrared) with strain engineering. [9] As a basic building block, silicon is widely used in the microelectronics industry; however, owing to its fundamental optical bandgap (1.12 eV), the use of silicon for optoelectronics (including photovoltaics) is still limited to visible and near-infrared spectral range (λ ≤ 1100 nm). Indeed, the key challenge is to enlarge the broadband photoabsorption (up to short-wavelength infrared) of silicon, such that it can be applied for commercial application: however, this yet remained a critical challenge.Recently, distinct from the p-n junction-based photovoltaic effect (PV), the flexoelectric effect driven zero-bias photocurrent under light illumination has been demonstrated, known as the flexo-photovoltaic (FPV) effect. [6] Therefore, being universal property, strain gradient induced FPV effect and simultaneously modification of the effective bandgap exceeds the fundamental bandgap absorption limit not only for silicon but other class of semiconductors as well. However, the flexoelectric-driven photo response is still reported to the fundamental bandgap modification. Herein, we demonstrate that a photon sensing of the single crystal silicon is extended far beyond the fundamental bandgap by utilizing the flexoelectric effect. Particularly, the localized force applied by a pointed tip induces long-range distributed inhomogeneous strain, which not only breaks the centrosymmetry but also extend the fundamental Mechanical deformation-induced strain gradients and coupled spontaneous electric polarization field in centrosymmetric materials, known as the flexoelectric effect, can generate ubiquitous mechanoelectrical functionalities, like the flexo-photovoltaic effect. Concurrently, nano/micrometer-scale inhomogeneous strain reengineers the electronic arrangements and in turn, could alter the fundamental limits of optoelectronic performance. Here, the flexoelectric effect-driven self-powered giant shortwavelength infrared (λ ≤ 1800 nm) photoresponse from centrosymmetric bulk silicon, indeed far beyond the fundamental bandgap (λ = 1100 nm) is demonstrated. Particularly, large on/off...

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Section: Resultsmentioning

confidence: 99%

“…As expected, the effective bandgap decreases with increasing the applied strain, which matches well with the previous reports. [ 10 ]…”

Section: Resultsmentioning

confidence: 99%

Controllable, Self‐Powered, and High‐Performance Short‐Wavelength Infrared Photodetector Driven by Coupled Flexoelectricity and Strain Effect

et al. 2021

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“…As presented in Fig. 11(a), they reported strain-induced reduction of Si bandgap, resulting in photodetection capabilities much beyond its fundamental absorption limit of 1,000 nm in Si NM based photodetectors [151]. The Si NMs were fabricated from SOI wafers and transferred on PI substrates.…”

Section: Strain Engineered Applications In Si Nmsmentioning

confidence: 99%

“…~ 300 nmDeterministic assembly Stretchable and foldable nMOS, pMOS, diode on PDMS[27] Below 10 nm Oxidation and selective etching of SOI wafers Stretchable MSM photodetector arrays[151] 270 nm Selective etching of SOI wafers and transfer printing Stretchable p-i-n photodetector arrays (origami electronic eye)[41] …”

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confidence: 99%

Si nanomebranes: Material properties and applications

2021

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Silicon (Si) has widely been used as an essential material in the modern semiconductor industry. Recently, new attempts have been actively made to apply Si to a variety of fields such as flexible electronic devices and biosensors by manufacturing Si nanomembranes (NMs) having nanometer thickness. In particular, as the thickness of Si is reduced to a nanometer scale, its mechanical, electrical, and optical properties differ from that of its bulk form, which provides opportunities for the development of new conceptual devices. In this review, we present recent advances in Si NM technology that exhibit functional features different from the bulk materials. In addition, we discuss the opportunities and current challenges related to this field. KEYWORDSSi nanomebranes, flexible electronics, bio-integrated electronics, Si optoelectronics, strain engineering Fabrication of Si nanomenbranesSi being a traditional semiconductor, is widely available for scientific and manufacturing purpose, in the form of rigid and brittle wafers. To fabricate mechanically flexible and stretchable Si membranes having thickness of few nanometers is, however, quite a challenging task. Flexible and stretchable silicon nanomembranes are fabricated by using the following

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“…Dual Inversion Layers and Fowler−Nordheim Tunneling in a p-i-n junction (p-Si/AlOx/n-ZnO nanowire) have been employed to realize broadband photodetection [15]. Tensile-strained Si nanomembrane has been applied in photodetectors with an absorption limit of up to 1550 nm [16]. For longer wavelengths in mid-infrared range, GeSn alloy films on silicon substrates have also been studied due to the possible smaller direct bandgap [17].…”

Section: Introductionmentioning

confidence: 99%

Extensive Broadband Near-Infrared Emissions from GexSi1−x Alloys on Micro-Hole Patterned Si(001) Substrates

et al. 2021

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Broadband near-infrared (NIR) luminescent materials have been continuously pursued as promising candidates for optoelectronic devices crucial for wide applications in night vision, environment monitoring, biological imaging, etc. Here, graded GexSi1−x (x = 0.1–0.3) alloys are grown on micro-hole patterned Si(001) substrates. Barn-like islands and branch-like nanostructures appear at regions in-between micro-holes and the sidewalls of micro-holes, respectively. The former is driven by the efficient strain relation. The latter is induced by the dislocations originating from defects at sidewalls after etching. An extensive broadband photoluminescence (PL) spectrum is observed in the NIR wavelength range of 1200–2200 nm. Moreover, the integrated intensity of the PL can be enhanced by over six times in comparison with that from the reference sample on a flat substrate. Such an extensively broad and strong PL spectrum is attributed to the coupling between the emissions of GeSi alloys and the guided resonant modes in ordered micro-holes and the strain-enhanced decomposition of alloys during growth on the micro-hole patterned substrate. These results demonstrate that the graded GexSi1−x alloys on micro-hole pattered Si substrates may have great potential for the development of innovative broadband NIR optoelectronic devices, particularly to realize entire systems on a Si chip.

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Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering

Cited by 51 publications

References 46 publications

Controllable, Self‐Powered, and High‐Performance Short‐Wavelength Infrared Photodetector Driven by Coupled Flexoelectricity and Strain Effect

Controllable, Self‐Powered, and High‐Performance Short‐Wavelength Infrared Photodetector Driven by Coupled Flexoelectricity and Strain Effect

Si nanomebranes: Material properties and applications

Extensive Broadband Near-Infrared Emissions from GexSi1−x Alloys on Micro-Hole Patterned Si(001) Substrates

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