2014
DOI: 10.1039/c4fd00109e
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Bridging silicon nanoparticles and thermoelectrics: phenylacetylene functionalization

Abstract: Silicon is a promising alternative to current thermoelectric materials (Bi2Te3). Silicon nanoparticle based materials show especially low thermal conductivities due to their high number of interfaces, which increases the observed phonon scattering. The major obstacle with these materials is maintaining high electrical conductivity. Surface functionalization with phenylacetylene shows an electrical conductivity of 18.1 S m−1 and Seebeck coefficient of 3228.8 μV K−1 as well as maintaining a thermal conductivity … Show more

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Cited by 24 publications
(24 citation statements)
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“…1 The results show the ZT at a value of 0.6 ± 0.1 with electrical conductivity of 18.1 ± 0.1 S m À1 .…”
Section: Resultsmentioning
confidence: 98%
See 2 more Smart Citations
“…1 The results show the ZT at a value of 0.6 ± 0.1 with electrical conductivity of 18.1 ± 0.1 S m À1 .…”
Section: Resultsmentioning
confidence: 98%
“…12 These spectra are in agreement with the previous results measured on the phenylacetylene-capped SiNPs. 1 The ALC resonances that are observed are around 2.2 T for both the compound and the nanoparticle samples (see Fig. 4).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Silicon nanoparticles may be printed into thin films on flexible substrates for thermoelectric devices . Ashby et al anchored phenylacetylene onto a silicon‐nanoparticle surface and obtained a thermal conductivity of 0.1 W K −1 m −1 and a ZT of 0.6 at room temperature . Neophytou predicted the thermal conductivities may be reduced to 2 W m −1 K −1 and the ZT value could reach ca.…”
Section: Nanostructured Silicon For Thermoelectric Generatorsmentioning
confidence: 99%
“…Already at the beginning of the research, it was understood that having a reduced thermal conductivity is not only enough, but improving the electrical conductivity of Si is a requirement to achieve high ZT values, at least around 1. For achieving higher electronic conductivity, doping and surface functionalization became important steps to reach higher ZT values using Si‐based nanostructures. One of the most studied system is SiGe alloy with improved ZT values of up to 1.3 (at 1775 K) for n‐type Si 0.8 Ge 0.2 .…”
Section: What Is Next? Further Applications Opportunities and Challmentioning
confidence: 99%