Brilliant photoluminescence from GaN film grown by PLD under particle-energy-manipulation

The gas dynamics and atomic kinetics of a laser ablation plume of lithium, expanding adiabatically in vacuum, are included in a numerical model, using isothermal and isentropic self-similar analytical solutions and steady-state collisional radiative equations, respectively. Measurements of plume expansion dynamics using ultrafast imaging for various laser wavelengths (266–1064nm), fluences (2–6.5Jcm−2), and spot sizes (50–1000μm) are performed to provide input parameters for the model and, thereby, study the influence of laser spot size, wavelength, and fluence, respectively, on both the plume expansion dynamics and atomic kinetics. Target recoil pressure, which clearly affects plume dynamics, is included in the model. The effects of laser wavelength and spot size on plume dynamics are discussed in terms of plasma absorption of laser light. A transition from isothermal to isentropic behavior for spot sizes greater than 50μm is clearly evidenced. Equilibrium conditions are found to exist only up to 300ns after the plume creation, while complete local thermodynamic equilibrium is found to be confined to the very early parts of the expansion.

show abstract

Expansion dynamics and equilibrium conditions in a laser ablation plume of lithium: Modeling and experiment

Stapleton

McKiernan

Mosnier

2005

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

Sun

et al. 2005

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Using reactive pulsed laser deposition assisted by electron cyclotron resonance (ECR) plasma, we have synthesized GaN thin films from a polycrystalline GaAs target at low temperatures. This was achieved by ablating the GaAs target in the reactive environment of a nitrogen plasma generated from ECR microwave discharge in pure nitrogen gas and depositing the films with concurrent bombardment by the low-energy nitrogen plasma stream. High-energy ion backscattering spectroscopy analysis shows that the synthesized films are gallium rich. Characterizations by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy confirm the presence of GaN bonds in the films. The recorded absorption spectrum also reveals GaN stretching mode characteristic of the hexagonal GaN phase. The synthesized GaN films are transparent in the visible region and have a band gap of 3.38eV. Optical emission from the plume during film deposition reveals that the plume created by pulsed laser ablation of the GaAs target consists mainly of monoatomic atoms and ions of gallium and arsenic. Mechanisms responsible for the formation of GaN molecules and the growth of GaN films are also discussed.

show abstract

Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping

Sun

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

We developed a method for compound host film synthesis and in situ doping based on plasma assisted pulsed laser deposition by coablation of two targets with two pulsed laser beams. The feasibility of this method was demonstrated by the preparation of Er-doped GaN films. In the reactive nitrogen environment and with the assistance of nitrogen plasma generated from electron cyclotron resonance microwave discharge, the ablation of a polycrystalline GaAs target resulted in the reactive deposition of a GaN host film, whereas the ablation of a metallic Er target provided the host with Er atoms for in situ doping in the growing GaN host film. Hexagonal GaN films were formed on a silicon substrate as the host and Er was incorporated into the host with controlled concentration. We found that the composition of the compound host could be adjusted by varying the laser fluence on the target for host deposition or the energy of the plasma stream bombarding the growing host film. The dopant concentration could also be independently controlled to vary in a wide range by changing the pulse repetition ratio of the two laser beams or the laser fluence on the target for dopant supply. It was also proved that doping of very low concentrations could be easily realized by simply adjusting the pulse repetition rate and the fluence of the second laser.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Brilliant photoluminescence from GaN film grown by PLD under particle-energy-manipulation

Cited by 3 publications

References 9 publications

Expansion dynamics and equilibrium conditions in a laser ablation plume of lithium: Modeling and experiment

Expansion dynamics and equilibrium conditions in a laser ablation plume of lithium: Modeling and experiment

Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

Electron cyclotron resonance plasma assisted pulsed laser deposition for compound host film synthesis and in situ doping

Contact Info

Product

Resources

About