Brittle fracture induced by phase transformation of Ni-Cu-Sn intermetallic compounds in Sn-3Ag-0.5Cu/Ni solder joints under extreme temperature environment

Tian, Ruyu; Hang, Chunjin; Tian, Yanhong; Feng, Jie

doi:10.1016/j.jallcom.2018.10.394

Cited by 47 publications

(10 citation statements)

References 33 publications

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“…No local melting zone was observed at 1.0 × 10 3 A/cm 2 , while the local melting zone initiated and expanded with increasing current density from 2.0 × 10 3 A/cm 2 to 5.0 × 10 3 A/cm 2 , as shown in Figure 9a-f. When the current density reached 6.0 × 10 3 A/cm 2 , the fracture occurred at the solder/IMC layer interface with numerous exposed particles, presenting a brittle fracture feature [34] as shown in Figure 9g. The EDS results of particles in Figure 9g show that the atomic ratio of Cu and Sn was nearly 6:5, indicating that the particles were Cu 6 Sn 5 , as shown in Figure 9h.…”

Section: Fracture Of Solder Joints Under Current Stressingmentioning

confidence: 99%

Abnormal Shear Performance of Microscale Ball Grid Array Structure Cu/Sn–3.0Ag–0.5Cu/Cu Solder Joints with Increasing Current Density

Wang

Pan

2022

Crystals

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The shear performance and fracture behavior of microscale ball grid array structure Cu/Sn–3.0Ag–0.5Cu/Cu solder joints with increasing electric current density (from 1.0 × 103 to 6.0 × 103 A/cm2) at various test temperatures (25 °C, 55 °C, 85 °C, 115 °C, 145 °C, and 175 °C) were investigated systematically. Shear strength increases initially, then decreases with increasing current density at a test temperature of no more than 85 °C; the enhancement effect of current stressing on shear strength decreases and finally diminishes with increasing test temperatures. These changes are mainly due to the counteraction of the athermal effect of current stressing and Joule heating. After decoupling and quantifying the contribution of the athermal effect to the shear strength of solder joints, the results show that the influence of the athermal effect presents a transition from an enhancement state to a deterioration state with increasing current density, and the critical current density for the transition decreases with increasing test temperatures. Joule heating is always in a deterioration state on the shear strength of solder joints, which gradually becomes the dominant factor with increasing test temperatures and current density. In addition, the fracture location changes from the solder matrix to the interface between the solder matrix and the intermetallic compound (IMC) layer (the solder/IMC layer interface) with increasing current density, showing a ductile-to-brittle transition. The interfacial fracture is triggered by current crowding at the groove of the IMC layer and driven by mismatch strain at the solder/IMC layer interface, and the critical current density for the occurrence of interfacial fracture decreases with increasing test temperatures.

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Section: Fracture Of Solder Joints Under Current Stressingmentioning

confidence: 99%

Abnormal Shear Performance of Microscale Ball Grid Array Structure Cu/Sn–3.0Ag–0.5Cu/Cu Solder Joints with Increasing Current Density

Wang

Pan

2022

Crystals

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“…Although the alloy solder can join different materials with ultrahigh bonding strength, they usually need high heating temperatures. [30][31][32][33][34][35][36] On the contrary, the transient liquid phase (TLP) technology which utilizes the principle of eutectic bonding can be operated at low temperatures. Metal layers that can satisfy the eutectic conditions are usually used for the realization of eutectic bonding.…”

Section: Eutectic Hermetic Bonding For Mems Packaging In Wafer Sizementioning

confidence: 99%

“…[39] (g) Schematic diagram of anodic bonding. [34] (h) TEM observation of the Si/glass bonding interface. [40] (i) Effects of surface pre-treatments on the anodic bonding.…”

Section: Wafer Direct Bonding Of Si-based Materials For Mems Devicesmentioning

confidence: 99%

“…Besides, waferlevel hermit vapor cell, as shown in Figure 2(k), and capacitive MEMS sensors, as shown in Figure 2(l), are also successfully fabricated via the anodic bonding method. [34,35] A variety of commodities has proven that anodic bonding is a commercially mature MEMS packaging technique.…”

Section: Wafer Direct Bonding Of Si-based Materials For Mems Devicesmentioning

confidence: 99%

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Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics

Tian

et al. 2020

International Journal of Optomechatronics

Self Cite

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“…It has been successfully applied to system-in-package (SiP) and fabrication of heterogeneous structures [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. Traditional wafer bonding technology is mainly based on silicon (Si)-based materials and is oriented to the microelectromechanical system (MEMS) packaging [ 8 , 9 , 10 ]. Due to the high-quality bonding interface, wafer bonding can satisfy meet the strict requirements of MEMS devices in terms of airtightness, bonding strength, and interface corrosion in extreme environments.…”

Section: Introductionmentioning

confidence: 99%

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Ren

et al. 2021

Micromachines

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Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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Brittle fracture induced by phase transformation of Ni-Cu-Sn intermetallic compounds in Sn-3Ag-0.5Cu/Ni solder joints under extreme temperature environment

Cited by 47 publications

References 33 publications

Abnormal Shear Performance of Microscale Ball Grid Array Structure Cu/Sn–3.0Ag–0.5Cu/Cu Solder Joints with Increasing Current Density

Abnormal Shear Performance of Microscale Ball Grid Array Structure Cu/Sn–3.0Ag–0.5Cu/Cu Solder Joints with Increasing Current Density

Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

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