Broad temperature range low field magnetoresistance in La0.7Ca0.3MnO3:nano-ZnO composites

Siwach, P. K.; Srivastava, Pankaj; Singh, Jai; Singh, H. K.; Srivastava, O. N.

doi:10.1016/j.jallcom.2009.03.012

Cited by 20 publications

(7 citation statements)

References 26 publications

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“…Therefore, during the last decades the major focus of scientific investigations has been on increasing the LFMR by introducing various artificial grain boundaries in thin-film structures to ensure a thin-energy barrier for spin-polarized tunneling. In some cases, an insulating thin layer was used (for example, SrTiO 3 multijunction La-Sr-Mn-O/SrTiO 3 /La-Sr-Mn-O [ 63 ]), or composite manganite films were grown with a second insulating oxide phase of ZnO, NiO or CeO [ 64 , 65 , 66 ]. It was demonstrated, that for layered structure of LSMO/SrTiO3/LSMO the LFMR = 50% could be found at 4.2 K in magnetic field of 20 mT [ 63 ].…”

Section: Colossal Magnetoresistance Materialsmentioning

confidence: 99%

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Žurauskienė

2023

Sensors

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Advanced scientific and industrial equipment requires magnetic field sensors with decreased dimensions while keeping high sensitivity in a wide range of magnetic fields and temperatures. However, there is a lack of commercial sensors for measurements of high magnetic fields, from ∼1 T up to megagauss. Therefore, the search for advanced materials and the engineering of nanostructures exhibiting extraordinary properties or new phenomena for high magnetic field sensing applications is of great importance. The main focus of this review is the investigation of thin films, nanostructures and two-dimensional (2D) materials exhibiting non-saturating magnetoresistance up to high magnetic fields. Results of the review showed how tuning of the nanostructure and chemical composition of thin polycrystalline ferromagnetic oxide films (manganites) can result in a remarkable colossal magnetoresistance up to megagauss. Moreover, by introducing some structural disorder in different classes of materials, such as non-stoichiometric silver chalcogenides, narrow band gap semiconductors, and 2D materials such as graphene and transition metal dichalcogenides, the possibility to increase the linear magnetoresistive response range up to very strong magnetic fields (50 T and more) and over a large range of temperatures was demonstrated. Approaches for the tailoring of the magnetoresistive properties of these materials and nanostructures for high magnetic field sensor applications were discussed and future perspectives were outlined.

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Section: Colossal Magnetoresistance Materialsmentioning

confidence: 99%

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Žurauskienė

2023

Sensors

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“…The major focus has been made on fabrication of various types of grain boundaries providing an energy barrier for spin-polarized tunneling of charge carriers. Specially grown thin film junctions (La-Sr-Mn-O/SrTiO 3 /La-Sr-Mn-O) [12], composite films of manganite with insulating oxides such as ZnO or CeO [13,14], synthesis of manganite nanoparticles [15], and other methods were proposed to increase the LFMR, and as a result, magnetic sensing possibilities. It has to be noted that, for wide range of applications, sensors measuring magnetic fields up to several Tesla are desirable.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Manganite Films Grown by Pulsed Injection MOCVD: Tuning Low- and High-Field Magnetoresistive Properties for Sensors Applications

Stankevič

Žurauskienė

Kersulis

et al. 2022

Sensors

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The results of colossal magnetoresistance (CMR) properties of La0.83Sr0.17Mn1.21O3 (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al2O3, and amorphous Si/SiO2 substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (−31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (−15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (−56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.

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“…This low-field effect is technologically important and has been shown to be strongly determined by electron scattering at grain boundaries and magnetic domain walls . As a result, it can be tailored to a large extent through grain boundary engineering, which is one of the reasons magnetoresistive nanomaterials and composites thereof have been of interest in recent times, with much attention paid to interface effects. − Moreover, it has been reported recently by Mishra and co-workers that the magnetization of electrolyte-gated nano-LSMO can be controlled by electrostatic modulation of the surface charge carrier density. , This is an interesting result, as it might pave the way for novel applications of LSMO and other related materials. They showed that the relative change in magnetization upon capacitive charging (i.e., formation of a Helmholtz double-layer at the solid/liquid electrolyte interface) can be as large as 2.5%, and this kind of electrostatic carrier doping is reversible, unlike chemical doping.…”

Section: Introductionmentioning

confidence: 99%

Large Magnetoresistance and Electrostatic Control of Magnetism in Ordered Mesoporous La_1–xCa_xMnO₃ Thin Films

et al. 2014

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Ferroic nanomaterials have received much attention in recent times because of their potential for novel applications. Here, we report a facile bottom–up synthetic approach to the first ordered mesoporous mixed-valence manganese oxide. Continuous thin films of perovskite-type La0.68Ca0.30Mn1.02O3−δ have been prepared from common inorganic salt precursors by taking advantage of the superior templating properties of a polyisobutylene-block-poly(ethylene oxide) diblock copolymer. This novel solution-processed mesostructured material is well-defined at the nanometer and micrometer levels and behaves superparamagnetically above 230 K. Furthermore, it exhibits large magnetoresistance over a wide range of temperatures due to complex percolation pathways for electron transport imparted by the unique pore–solid architecture, and it is ferromagnetic metallic below 180 K. We also demonstrate reversible magnetization modulation of up to 8.5% by electrostatic charge carrier doping in the polymer-templated thin films. This value is the highest thus far reported for electrolyte-gated mixed-valence manganese oxides.

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Broad temperature range low field magnetoresistance in La0.7Ca0.3MnO3:nano-ZnO composites

Cited by 20 publications

References 26 publications

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Nanostructured Manganite Films Grown by Pulsed Injection MOCVD: Tuning Low- and High-Field Magnetoresistive Properties for Sensors Applications

Large Magnetoresistance and Electrostatic Control of Magnetism in Ordered Mesoporous La_1–xCa_xMnO₃ Thin Films

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Broad temperature range low field magnetoresistance in La0.7Ca0.3MnO3:nano-ZnO composites

Cited by 20 publications

References 26 publications

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Nanostructured Manganite Films Grown by Pulsed Injection MOCVD: Tuning Low- and High-Field Magnetoresistive Properties for Sensors Applications

Large Magnetoresistance and Electrostatic Control of Magnetism in Ordered Mesoporous La1–xCaxMnO3 Thin Films

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Large Magnetoresistance and Electrostatic Control of Magnetism in Ordered Mesoporous La_1–xCa_xMnO₃ Thin Films