Broadband 240-GHz Radar for Non-Destructive Testing of Composite Materials

Merkle, Thomas; Meier, Dominik; Wagner, Stefan; Tessmann, A.; Kuri, M.; Maßler, H.; Leuther, A.

doi:10.1109/jssc.2019.2921154

Cited by 42 publications

(17 citation statements)

References 36 publications

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“…TFMSL wiring permits a compact matching network implementation and the accurate in-phase matching of parallelized multifinger devices in close proximity, realizing broadband PA MMICs with reduced chip width. These advantages of using thin benzocyclobutene (BCB) layers for TFMSL wiring has been described and investigated for GaAs pHEMT [18] and InP HEMT [19], [20] technologies as well as this InGaAs mHEMT technology [11], [21], [22] in detail previously.…”

Section: Thin-film Transmission Linesmentioning

confidence: 99%

“…The TFMSL interconnections depicted in Fig. 2 (MET2 TFMSL and MET2MET3 TFMSL), which are implemented in the matching networks of the reported PA circuits, have been widely used for the design of compact MMICs in this InGaAs mHEMT technology for a wide variety of applications [22]- [24]. MET1 is implemented as substrate shielding dc and RF ground and the TFMSL signal line is routed in MET2, using the 1.4-µm-thick BCB layer (BCB2) between MET1 and MET2 as dielectric substrate.…”

Section: Thin-film Transmission Linesmentioning

confidence: 99%

“…Since the required area for signal routing is significantly increased for the elevated CPW and air-bridge TFMSL compared to the MET2 and MET2MET3 TFMSL, they are only implemented in the Wilkinson power combiners of the power amplifier MMICs discussed in Section V. Due to their better folding possibilities [22], the TFMSL interconnections are used for the design of the compact unit amplifier cell described in the following section.…”

Section: On the Right (Met2met3 Tfmsl)mentioning

confidence: 99%

“…In order to ensure stability and suppress possible odd-mode oscillations, stabilization elements have been implemented at the input of the first cascode stage as well as the output of all cascode and CS multifinger devices described previously. The implementation of air bridges between the drain fingers of multifinger CS transistors was investigated and described in detail in [22]. The same approach is used in the CS device depicted in Fig.…”

Section: B Compact Pa Cell Modeling and Simulationmentioning

confidence: 99%

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Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

John

Tessmann

Leuther

et al. 2020

IEEE Trans. THz Sci. Technol.

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In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic integrated circuits (MMICs) covering the 280-330-GHz frequency range. The technology used is a 35-nm gate-length InGaAs metamorphic highelectron-mobility transistor (mHEMT) technology. Two power amplifier MMICs are reported, based on a compact unit amplifier cell, which is parallelized two times using two different Wilkinson power combiners. The Wilkinson combiners are designed using elevated coplanar waveguide and air-bridge thin-film transmission lines in order to implement low-loss 70-Ω lines in the back-endof-line of this InGaAs mHEMT technology. The five-stage SSPA MMICs achieve a measured small-signal gain around 20 dB over the 280-335-GHz frequency band. State-of-the-art output power performance is reported, achieving at least 13 dBm over the 286-310-GHz frequency band, with a peak output power of 13.7 dBm (23.4 mW) at 300 GHz. The PA MMICs are designed for a reduced chip width while maximizing the total gate width of 512 µm in the output stage, using a compact topology based on cascode and common-source devices, improving the output power per required chip width significantly.

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Section: Thin-film Transmission Linesmentioning

confidence: 99%

Section: Thin-film Transmission Linesmentioning

confidence: 99%

Section: On the Right (Met2met3 Tfmsl)mentioning

confidence: 99%

Section: B Compact Pa Cell Modeling and Simulationmentioning

confidence: 99%

See 2 more Smart Citations

Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

John

Tessmann

Leuther

et al. 2020

IEEE Trans. THz Sci. Technol.

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“…Bandwidths in excess of 100 GHz are within easy reach, meeting the demands for ultra-wide band operation in high-speed optical communications, nondestructive testing, broadband measurements (single-sweep 220 GHz VNAs are on the market), spectroscopy, and others [1], [2]. Also, radar-based imaging instruments demand for solutions well above 100 GHz, with bandwidths of 60 GHz up to even 100 GHz [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Connecting Chips With More Than 100 GHz Bandwidth

et al. 2021

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A new extraction flow of the s mall‐signal s witch‐HEMT model based on the parasitic resistance scanning algorithm

Popov

Добуш

Salnikov

2022

Int J RF Mic Comp-Aid Eng

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Recent research interest in switch High Electron Mobility Transistor (HEMT) modeling revealed the special modeling requirement that is a parasitic capacitance shell surrounding the equivalent circuit. Despite the robust determination of parasitic capacitances, one still may face several problems when extracting a small-signal switch-HEMT model. Practical switch-HEMT test structures include different configurations of gate network with additional microstrip lines, large-value resistors, and via-holes. Ignoring parts of these networks results in unfavorable errors when comparing measured and simulated results. Another problem may arise when extracting the switch-HEMT equivalent circuit parameters from the measured S-parameters of the grounded gate test structures: obtained parasitic resistances can be exaggerated, resulting in negative values of intrinsic channel resistance (conductance). This paper presents a new switch-HEMT extraction flow intended to address the mentioned challenges. To eliminate an excessive gate inductance attributed to via-hole, we introduce a concept of the gate network de-embedding. A negative channel resistance (conductance) problem is handled by applying a new parasitic resistance scanning algorithm that allows finding the model parameter vector with reasonable positive values in the vicinity of the Sparameters modeling error minimum. Accurate S-parameters modeling results verify the proposed extraction flow. Obtained small-signal switch-HEMT models are validated by designing and manufacturing a 2 dB digital step attenuator section.

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Broadband 240-GHz Radar for Non-Destructive Testing of Composite Materials

Cited by 42 publications

References 36 publications

Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

Connecting Chips With More Than 100 GHz Bandwidth

A new extraction flow of the s mall‐signal s witch‐HEMT model based on the parasitic resistance scanning algorithm

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