Broadband blue superluminescent light-emitting diodes based on GaN

Feltin, E.; Castiglia, A.; Cosendey, Gatien; Sulmoni, Luca; Carlin, J.‐F.; Grandjean, N.; Rossetti, M.; Dorsaz, J.; Laino, V.; Duelk, M.; Vélez, Christian

doi:10.1063/1.3202786

Cited by 74 publications

(47 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This comparison proves that PA is resonant cavity related while PB is the spontaneous part in GaN-based LD, which does not change much in both situations. PA experiences positive oscillating feedback in resonant cavity, which makes it distinct from superluminescence [22,23], namely, amplified spontaneous emission. More detailed analyses indicate that PB should be partially polarized due to the anisotropy of GaN material structure, which would be described elsewhere.…”

Section: Resultsmentioning

confidence: 99%

Stimulated emission in GaN-based laser diodes far below the threshold region

et al. 2014

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Stimulated emission in GaN-based laser diodes far below the threshold region

et al. 2014

View full text Add to dashboard Cite

“…A 2250 μm long, GaN optical device was fabricated from a 2 InGaN quantum well (QW) laser epi-wafer, which had been grown by metalorganic vapour phase epitaxy (MOVPE) on a 2 inch GaN substrate by Novagan [9], [12]. Shown schematically in Figure 2, it does not feature tilted facets, but instead these were fabricated perpendicular to the waveguide.…”

Section: Laser Device Fabrication and Characteristicsmentioning

confidence: 99%

“…As such, short wavelength (~400 nm) LEDs and lasers are now commonplace in solid state lighting [7] and high-density optical storage systems [8]. The disclosure of a GaN superluminescent light emitting diode (SLED) in 2009 by Feltin et al, with 10 mW output power and 4.6 nm bandwidth [9] expanded the list of possible applications to include pico-projectors [10] and fibre optic gyroscopes (FOGs) [11]. SLEDs are optical devices that take advantage of amplified spontaneous emission, where light is generated through spontaneous emission and experiences gain due to stimulated emission as it propagates along the waveguide; resulting in a broader bandwidth than observed in lasers and higher output powers than in LEDs.…”

Section: Introductionmentioning

confidence: 99%

Gallium nitride light sources for optical coherence tomography

et al. 2017

View full text Add to dashboard Cite

The advent of optical coherence tomography (OCT) has permitted high-resolution, non-invasive, in vivo imaging of the eye, skin and other biological tissue. The axial resolution is limited by source bandwidth and central wavelength. With the growing demand for short wavelength imaging, super-continuum sources and non-linear fibre-based light sources have been demonstrated in tissue imaging applications exploiting the near-UV and visible spectrum. Whilst the potential has been identified of using gallium nitride devices due to relative maturity of laser technology, there have been limited reports on using such low cost, robust devices in imaging systems.A GaN super-luminescent light emitting diode (SLED) was first reported in 2009, using tilted facets to suppress lasing, with the focus since on high power, low speckle and relatively low bandwidth applications. In this paper we discuss a method of producing a GaN based broadband source, including a passive absorber to suppress lasing. The merits of this passive absorber are then discussed with regards to broad-bandwidth applications, rather than power applications. For the first time in GaN devices, the performance of the light sources developed are assessed though the point spread function (PSF) (which describes an imaging systems response to a point source), calculated from the emission spectra. We show a sub-7µm resolution is possible without the use of special epitaxial techniques, ultimately outlining the suitability of these short wavelength, broadband, GaN devices for use in OCT applications.

show abstract

“…They offer a low divergence point source with potential for broad spectral bandwidth and high powers. The first GaN SLED was described by Feltin et al where 4.6 nm bandwidth and an output power of 10 mW were achieved under pulsed operation [10].…”

mentioning

confidence: 99%

Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

Goldberg

Boldin

Andersson

et al. 2017

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

Abstract-Optical coherence tomography (OCT) exploits the coherent properties of light to permit noninvasive and in situ imaging of biological tissues. By expanding the range of OCT light sources from the traditional telecoms wavelengths to include ∼400 nm gallium nitride (GaN) based superluminescent light emitting diodes (SLEDs) subcellular axial and lateral resolution could be achieved, provided enhanced bandwidth is also achieved. Due to the focus on high-power applications for GaN SLEDs, there has been limited work on increasing the source bandwidth. In this paper, we demonstrate for the first time a ∼400 nm GaN SLED with >10 nm bandwidth employed within an OCT system, where an axial resolution of ∼7 µm is achieved. Bespoke GaN SLEDs suggest that <4 µm axial resolution imaging is imminent for short wavelength devices.Index Terms-Axial resolution, broad bandwidth, gallium nitride superluminescent light emitting diodes, optical coherence tomography.

show abstract

Broadband blue superluminescent light-emitting diodes based on GaN

Cited by 74 publications

References 11 publications

Stimulated emission in GaN-based laser diodes far below the threshold region

Stimulated emission in GaN-based laser diodes far below the threshold region

Gallium nitride light sources for optical coherence tomography

Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

Contact Info

Product

Resources

About