Broadband Detection capability of a Triple Barrier Resonant Tunneling Diode

Arzi, Khaled; Clochiatti, Simone; Mutlu, Enes; Kowaljow, Alexander; Sievert, Benedikt; Erni, Daniel; Weimann, Nils; Prost, W.

doi:10.1109/iwmts.2019.8823724

Cited by 11 publications

(3 citation statements)

References 5 publications

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“…When bias is applied and the resonant condition is met, the strong current increase leads to a strong non-linearity, with associated responsivity that can exceed the thermal limit [52]. TB RTDs can be used as high-sensitivity zero-bias detectors [155], with demonstrated voltage responsivities of up to 66 kV/W at 280 GHz [156]. This exceptional performance of TB RTDs has not yet been exploited in system applications.…”

Section: Rtd Thz Detectorsmentioning

confidence: 99%

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Cimbri

Wang

Al-Khalidi

et al. 2022

IEEE Trans. THz Sci. Technol.

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Resonant tunnelling diode (RTD) technology is emerging as one of the promising semiconductor-based solidstate technologies for terahertz (THz) wireless communications. This paper provides a review of the state-of-the-art, with a focus on the THz RTD oscillator, which is the key component of RTDbased THz transmitters and coherent receivers. A brief summary on the device principle of operation, technology, modelling, as well as an overview of oscillator design and implementation approaches for THz emitters, is provided. A new insight to device evaluation and to the reported oscillator performance levels is also given, together with brief remarks on RTD-based THz detectors. Thereafter, an overview of the reported wireless links which utilise an RTD in either transmission or reception, or in both roles, is given. Highlight results include the record single-channel wireless data rate of 56 Gb/s employing an all RTD-based transceiver, which demonstrates the potential of the technology for future short-range communications. The paper concludes with a discussion of the current technical challenges and possible strategies for future progress.

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Section: Rtd Thz Detectorsmentioning

confidence: 99%

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Cimbri

Wang

Al-Khalidi

et al. 2022

IEEE Trans. THz Sci. Technol.

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“…[ 8–10 ] Triple barrier device structure additionally allows detector operation at zero bias. [ 11 ] Low noise‐equivalent power in the range of 2.5 pWHz −1/2 in the WR3.4 band can be achieved. [ 12 ] The additional functionality and increased degree of freedom in design due to the second quantum well make triple‐barrier (TB)‐RTDs attractive for THz operation.…”

Section: Introductionmentioning

confidence: 99%

Experimental and Theoretical Investigation of Collector Spacer and Doping Profile on Triple‐Barrier Resonant Tunneling Diodes

Mutlu,

Grygoriev,

Clochiatti

et al. 2023

Physica Status Solidi (a)

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Upcoming THz applications require compact, robust, and efficient sources with high output‐power. Among electronic devices, resonant tunneling diodes (RTDs) have been shown to be a promising candidate for THz operation. Triple barrier resonant tunneling diodes provide a high degree of design and operation freedom. Zero‐bias detection and THz emission is possible with the same device due to the asymmetric structure and IV curve. However, more investigations in the layer stack design are required. We present an investigation into the effect of collector spacer thickness and doping profile in the subcollector contact region. The aim is to simultaneously optimize the RF output‐power and cut‐off frequency in triple barrier structures. A series of devices with different collector spacers and two distinct doping profiles are fabricated. We observe a trade‐off between collector spacer thickness and doping profile for either higher output‐power or cut‐off frequency. In addition, we present simulation results from a Non‐Equilibrium Green’s Function solver implemented in Python. Here, we observe a need for accurate determination of the extent of the non‐equilibrium region to achieve simulation results matching the IV measurements.This article is protected by copyright. All rights reserved.

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“…In particular, power-efficient devices with small area < 𝜆 2 /4 are needed for such arrays. In that regard promising THz devices can be realized when integrating indium phosphide (InP) resonant tunneling diodes (RTD) with on-chip antennas, allowing for monostatic Tx-and Rxoperation from the same array [2], [3]. While patch antennas are top-firing into free space [4], alternative antenna types (e.g.…”

Section: Introductionmentioning

confidence: 99%

THz Detectors and Emitters with On-Chip Antenna aligned on Hyper-Hemispherical Silicon Lenses

Kress

Preuss

Mutlu

et al. 2021

2021 Fourth International Workshop on Mobile Terahertz Systems (IWMTS)

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On-chip antennas with radiation towards the substrate are affected by modest coupling performance to a freespace path. (Hyper-)hemispherical silicon lenses can improve the efficiency of quasi-optical emission and detection even at THz frequencies. This approach requires an alignment accuracy in the µm-scale at THz frequencies. In this contribution, we report on the benefit of hyper-hemispherical silicon lenses in terms of relaxed alignment accuracy needs. We present the impact of alignment on quasi-optical measurements using indium phosphide resonant-tunneling diodes. The main components of the resulting setups are discussed while the effect of alignment is quantitatively evaluated for both, hemispherical and hyper-hemispherical silicon lenses. Moreover, design rules and concepts for a heterointegrated system are derived on consecutive observations.

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Broadband Detection capability of a Triple Barrier Resonant Tunneling Diode

Cited by 11 publications

References 5 publications

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Experimental and Theoretical Investigation of Collector Spacer and Doping Profile on Triple‐Barrier Resonant Tunneling Diodes

THz Detectors and Emitters with On-Chip Antenna aligned on Hyper-Hemispherical Silicon Lenses

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