Broadband GaAs pHemt LNA design for T/R module application

Abstract

In this paper, a three stages monolithic low noise amplifier for T/R module application is presented. This amplifier is fully integrated on 0.15 µm GaAs pHEMT technology and achieves a wide bandwidth from 6 to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third-order intercept point is over 30 dBm and the 1 dB compression point (P 1dB ) is 16 dBm at the output.