Phase modulation
plays a crucial role in various terahertz applications,
including radar detection, biomedical imaging, and data communication.
Existing terahertz phase shifters typically rely on tuning the resonant
effect of metamaterial structures to achieve a narrow bandwidth phase
shift. However, the terahertz band offers a wide bandwidth resource,
which has great advantages in high longitudinal resolution detection,
high-capacity communication, spectral imaging, and so on. Here, we
propose and demonstrate an ultrawideband terahertz phase shifting
mechanism that utilizes an optical conductivity tunable interface
combined with a nonresonant metasurface operating in the total internal
reflection geometry. This approach effectively modulates the phase
of the reflected terahertz signal in an ultrawideband. To implement
this mechanism, we designed a structure consisting of graphene-loaded
nonresonant periodic metal microslits arranged in the total internal
reflection geometry. By controlling the gate voltage of the graphene
within a range of ±5 V, an averaged ∼120° continuous
phase shift in the frequency range of 0.4 to 1.2 THz was achieved,
with a group delay less than 50 ps. Notably, in the frequency range
of 1 to 1.2 THz, the phase modulation exhibited a linear relationship
with the driving voltage. Our device demonstrated minimal fluctuations
in the reflected amplitude, with a deviation of less than 1 dB and
an insertion loss of less than 10 dB. Additionally, the modulation
speed of this solid-state device reached the kHz level. Remarkably,
the phase modulation bandwidth (Δf/f) achieved approximately 100% of the arithmetic center
frequency at 0.8 THz, surpassing the definition of ultrawideband,
which typically encompasses 20% of the center frequency. To the best
of our knowledge, this is the first and most wideband phase shifter
developed for the terahertz regime with the lowest recorded group
delay to date.